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10.5 μm thick Sn-doped silica films were prepared by the modified chemical vapor deposition followed by the solution-doping method. The films were exposed to 248 and 266 nm laser light, respectively. Positive refractive index change up to 2×10-4 at 1550 nm was observed by measuring the reflectivity based on Fresnel formulas. The data of UV absorption spectra suggest that the photosensitivity of the Sn-doped silica film under high energy density laser irradiation should be mainly due to the bond breaking of oxygen deficient defects, while under relatively low energy density laser irradiation, the refractive index change probably originates from photoconversion of optically active defects. [ABSTRACT FROM AUTHOR]

Direct ultra violet patterning method is used after fabrication of organic/inorganic glass wave guides by the sol-gel technique. The results reveal that the hybrid material is apt for application in integrated thermo-optic components.