Search

Electron beam induced current (EBIC) measurements provide a powerful tool for characterizing semiconductor based materials and devices. By measuring the current generated by the electron beam of a scanning electron microscope (SEM), EBIC allows us to extract the minority carrier diffusion length (L) and the surface recombination velocity to diffusivity ratio (S/D) of a material. When combined with information on minority carrier lifetime (τ), for instance from time-resolved photoluminescence measurements, the minority carrier mobility of the material can be extracted. However, the EBIC technique relies heavily on the accurate modeling of the carrier generation and collection process. Traditionally, this was achieved using a combination of empirical analytical expressions (and later Monte Carlo simulations) for carrier generation and analytical diffusion/ recombination expressions for carrier collection. This approach introduces significant uncertainties into the extracted material parameters. Here, we present a numerical approach to EBIC modeling which improves the spatial resolution of our model, while also retaining information regarding the relative EBIC signal as a function of incident beam energies and currents. We apply this technique to investigate the temperature dependent minority carrier mobility of InAs/InAsSb and InGaAs/ InAsSb strained layer superlattice infrared detectors and compare our results to the values obtained using external quantum efficiency measurements of the same samples. Our approach not only allows for an improvement in the uncertainty of the extracted material parameters, but also offers insight into the material and device behavior as a function of nonequilibrium carrier concentration. The technique presented here offers potentially improved characterization of not only infrared detectors, but a range of semiconductor-based devices. [ABSTRACT FROM AUTHOR]

The fraction R of charges undergoing discharge during the time separating two electron pulses is derived from the induced current method developed in a scanning electron microscope. Irradiation is performed via a 10 keV defocused electron beam and low current density. The evolution of R with temperature (in the range 300-663 K) obeys to an Arrhenius type relation. Activation energies connected with the processes involved are deduced. In sapphire, no discernible discharge is observed due to the dominance of deep traps. In silver doped sapphire, R increases sharply from 10% to 70% as the temperature rises from 360 to 420 K, with a corresponding activation energy of 0.51 eV. In contrast, in polycrystalline alumina processed by solid state sintering (grain diameters of 1.7, 2.7, and 4.5 μm) the degree of discharge increases continuously with temperature and grain size. The enhancement with grain size indicates that the sintering conditions influence strongly the efficiency of a gettering effect. The activation energy below 573 K is about 0.12 eV independently of grain size. Above 573 K, a second activation energy of 0.26 eV appears for the smallest grain size sample. The results suggest that discharge may stem from a density of trapping states, associated to grain boundaries in sintered samples, rather than from a single trapping level linked to the doping element as Ag in sapphire. [ABSTRACT FROM AUTHOR]

The aligned CdS nanorods are obtained by dispersing CdS in the conducting polyaniline matrix. The rods are about 50 nm in diameter and 400 nm in length. The significant changes of electronic absorption spectra of CdS nanorods and conducting polyaniline indicate the strong interaction between them. CdS—Polyaniline nanocomposites exhibit a three-dimensional Mott’s hopping process in the electrical conduction. Temperature variation of frequency dependent conductivity implies the correlated barrier hopping. The barrier height increases with the content of CdS. [ABSTRACT FROM AUTHOR]

We investigated the thermal stability of a N-incorporated amorphous Hf silicate film in terms of Hf diffusion in the film using high-angle annular-dark-field scanning transmission electron microscopy. We first examined HfxSi1-xO2 (x=0.5,1.0) films with and without N incorporation. Our analysis showed that N incorporation (15 at. % of N) into the Hf0.5Si0.5O2 film significantly suppressed chemical component separation during annealing at 1000 °C. In contrast, clear separation of Hf-rich and Hf-poor (SiO2-rich) regions occurred in the Hf0.5Si0.5O2 film without N incorporation. In addition, HfO2 crystalline particle formation was observed in the HfO2 films with and without N incorporation (25 at. % of N). These results strongly suggest that Si–N bonding in the N-incorporated Hf0.5Si0.5O2 film, rather than Hf–N chemical bonding, is the main cause of the suppression of the chemical component separation and HfO2 crystallization. Second, we examined Hf diffusion in a SiO2 film with and without N incorporation and found that the N incorporation significantly reduced the Hf diffusion. We therefore infer that the suppression of the chemical component separation in the N-incorporated Hf silicate film can be explained in terms of the suppression of Hf diffusion by the Si–O, N network in the N-incorporated Hf silicate film. [ABSTRACT FROM AUTHOR]

The time evolution of gallium nitride quantum dots luminescence has been recorded in situ in a scanning electron microscope. Electrons of 10 keV were injected in a stationary spot in a scanning electron microscope during 30 min. Two different regimes were evidenced depending on the beam current density. At low density, the cathodoluminescence (CL) intensity decreased rapidly and a dark spot appeared. At high beam density, the CL intensity decrease was slower, and a dark ring centered on the beam injection location was formed. All the results are coherently interpreted by an enhanced diffusion of nonradiative defects promoted by nonradiative recombinations. [ABSTRACT FROM AUTHOR]

Porous silicon carbide fabricated from p-type 4H and 6H SiC wafers by electrochemical etching in hydrofluoric electrolyte is studied. An investigation of the dependence on wafer polarity reveals that pore formation is favored on the C face while complete dissolution occurs on the Si face. When the etching is done on the C face, the pore wall thickness decreases with increasing current density. The morphology of the front surface of the sample depends on the prior treatment of the workpiece surface. The porosity is estimated based on the analysis of scanning electron microscope images, charge-transfer calculations, and gravimetric analysis. [ABSTRACT FROM AUTHOR]

Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the luminescence mechanisms in tin oxide. Sintered material prepared from high purity powder has been found to show a strong dependence of the CL emission on the thermal treatments applied during sample preparation. SEM images show the presence of nano and microcrystalline grains. The correlation of the grain size and morphology with the optical emission is analyzed by CL microscopy and spectroscopy. The main emission bands appear centered at about 2.58, 2.25, and 1.94 eV depending on the sintering treatment. CL images reveal that the 2.25 and the 2.58 eV bands are associated at specific crystal faces. The evolution of the luminescence bands with mechanical milling shows a complex evolution of the 1.94 and 2.58 eV emissions which is explained by formation and recovery of defects during milling. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope (SEM) is a useful and rapid technique for studying dopant distributions with high spatial resolution in semiconductor materials and devices. However, the technique has a major drawback: although p-n junctions and differently doped p-type regions can be imaged, the contrast from differently doped n-type regions is extremely low, hence, such regions cannot normally be detected. We demonstrate that energy filtering of the secondary electrons substantially enhances the contrast of differently doped n-type regions, so that they are easily differentiated and mapped. This is because the contrast is based on the shift of energy spectra from n and p regions rather than secondary electron yield differences that lead to the conventional dopant contrast. We have used a standard commercially available Schottky field emission gun SEM for our work. Energy-filtered secondary electron imaging in a SEM therefore provides a rapid technique for the imaging and mapping of both p-type and n-type dopants. Our initial results indicate that a spatial resolution of <6 nm can be expected for favorable specimens. [ABSTRACT FROM AUTHOR]

Presents a study which analyzed transient cathodoluminescence of semiconductors in a scanning electron microscope. Method of the study; Results and discussion; Conclusion.

Deals with a study which measured the electron densities in CH[sub4]/H[sub2]/Ar and CCl[sub2]F[sub2]/O[sub2] electron cyclotron resonance discharges of semiconductors. Experimentation details; Assessment on surface morphologies through scanning electron microscopy; Functions of microwave power.