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Spin–orbit torque (SOT) can provide efficient electrical manipulation of magnetism via applying electrical current to breaking the symmetry of damping-like torque. In the heterojunction of heavy and ferromagnetic metal, Dzyaloshinskii–Moriya interaction (DMI) is one of the key ingredients for stabilizing chiral spin structures, like chiral domain walls. Meanwhile, materials with larger charge-spin conversion rates are also highly expected for the efficient SOT. In this paper, spin–orbit torque magnetic switching is observed in the perpendicularly magnetized Pt/Co/Bi2Se3 and shows relatively high efficiency with low critical switching current density of about 5 × 105 A cm−2. The SOT efficiency and DMI in perpendicularly magnetized Pt/Co/Bi2Se3 were quantitatively investigated by electrical detection of the effective spin Hall field. The DMI constant is about 2.6 mJ m−2, and the effective spin Hall angle of Pt/Co/Bi2Se3 is about 0.14. The work also demonstrates that the Bi2Se3 layer takes the main responsibility for SOT, and the Pt/Co interface is the main source of DMI in Pt/Co/Bi2Se3 structures, which makes it possible to achieve independent optimization of DMI and SOT in the Pt/Co/Bi2Se3 structure at room temperature for the advanced application of spintronic devices. [ABSTRACT FROM AUTHOR]

Spin–orbit torque (SOT) can provide efficient electrical manipulation of magnetism via applying electrical current to breaking the symmetry of damping-like torque. In the heterojunction of heavy and ferromagnetic metal, Dzyaloshinskii–Moriya interaction (DMI) is one of the key ingredients for stabilizing chiral spin structures, like chiral domain walls. Meanwhile, materials with larger charge-spin conversion rates are also highly expected for the efficient SOT. In this paper, spin–orbit torque magnetic switching is observed in the perpendicularly magnetized Pt/Co/Bi2Se3 and shows relatively high efficiency with low critical switching current density of about 5 × 105 A cm−2. The SOT efficiency and DMI in perpendicularly magnetized Pt/Co/Bi2Se3 were quantitatively investigated by electrical detection of the effective spin Hall field. The DMI constant is about 2.6 mJ m−2, and the effective spin Hall angle of Pt/Co/Bi2Se3 is about 0.14. The work also demonstrates that the Bi2Se3 layer takes the main responsibility for SOT, and the Pt/Co interface is the main source of DMI in Pt/Co/Bi2Se3 structures, which makes it possible to achieve independent optimization of DMI and SOT in the Pt/Co/Bi2Se3 structure at room temperature for the advanced application of spintronic devices. [ABSTRACT FROM AUTHOR]