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Metamaterials and periodic structures operating under high-power excitations are susceptible to breakdown. It was recently demonstrated that a localized breakdown created in a given region of a periodic structure can facilitate breakdown in other regions of the structure where the intensity of the incident electromagnetic fields may not be high enough to cause breakdown under normal circumstances. It was also demonstrated that this phenomenon is due to the generation of vacuum ultraviolet radiation at the location of the initial discharge, which propagates to the neighboring regions (e.g., other unit cells in a periodic structure) and facilitates the generation of a discharge at a lower incident power level. In this paper, we present the results of an experimental study conducted to determine the effective range of this physical phenomenon for periodic structures that operate in air and in pure nitrogen gas at atmospheric pressure levels. It is demonstrated that when breakdown is induced in a periodic structure using a high-power pulse with a frequency of 9.382 GHz, duration of 0.8 is, and peak power level of 25 kW, this phenomenon is highly likely to happen in radii of approximately 16-17 mm from the location of the initial discharge under these test conditions. The results of this study are significant in designing metamaterials and periodic structures for high-power microwave applications as they suggest that a localized discharge created in such a periodic structure with a periodicity less than 16-17 mm can spread over a large surface and result in a distributed discharge. [ABSTRACT FROM AUTHOR]

This paper presents an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology. The paper summarizes the major achievements accomplished during the last 10 years. It includes analysis of advanced experimental techniques that have been used, which are most appropriate for low-k patterning and resist strip, selection of chemistries, patterning strategies, masking materials, analytical techniques, and challenges appearing during the integration. Detailed discussions are devoted to the etch mechanisms of low-k materials and their degradation during the plasma processing. The problem of k-value degradation (plasma damage) is a key issue for the integration, and it is becoming more difficult and challenging as the dielectric constant of low-k materials scales down. Results obtained with new experimental methods, like the small gap technique and multi-beams systems with separated sources of ions, vacuum ultraviolet light, and radicals, are discussed in detail. The methods allowing reduction of plasma damage and restoration of dielectric properties of damaged low-k materials are also discussed. [ABSTRACT FROM AUTHOR]

Vacuum ultraviolet (VUV) radiation emitted by microwave driven argon plasmas has been investigated at low-pressure conditions (0.36 mbar). A classical surface-wave sustained discharge at 2.45 GHz has been used as plasma source. VUV radiation has been detected by emission spectroscopy in the 30-125 nm spectral range. The spectrum exhibits atomic and ionic argon emissions with the most intense spectral lines corresponding to the atomic resonance lines, at 104.8 nm and 106.7 nm, and to the ion lines, at 92.0 nm and 93.2 nm. Emissions at lower wavelengths were also detected, including lines with no information concerning level transitions in the well-known NIST database (e.g., the atomic line at 89.4 nm). The dependence of the lines' intensity on the microwave power delivered to the launcher was investigated. The electron density was estimated to be around 1012 cm-3 using the Stark broadening of the hydrogen Hβ line at 486.1 nm. The main population and loss mechanisms considered in the model for the excited argon atom and ion states emitting in the VUV range are discussed. The experimental results were compared to self-consistent model predictions, and a good agreement was obtained. [ABSTRACT FROM AUTHOR]

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge. [ABSTRACT FROM AUTHOR]

Ultraviolet photons can damage microorganisms, which rarely survive prolonged irradiation. In addition to the need for intact DNA, cell viability is directly linked to the functionality of the cell wall and membrane. In this work, Cladosporium herbarum spore monolayers exhibit high viability (7%) when exposed to 157 nm laser irradiation (412 kJm-2) or vacuum-ultraviolet irradiation (110-180 nm) under standard pressure and temperature in a nitrogen atmosphere. Spore viability can be determined by atomic-force microscopy, nano-indentation, mass, μ-Raman and attenuated reflectance Fourier-transform far-infrared spectroscopies and DNA electrophoresis. Vacuum ultraviolet photons cause molecular damage to the cell wall, but radiation resistance in spores arises from the activation of a photon-triggered signaling reaction, expressed via the exudation of intracellular substances, which, in combination with the low penetration depth of vacuum-ultraviolet photons, shields DNA from radiation. Resistance to phototoxicity under standard conditions was assessed, as was resistance to additional environmental stresses, including exposure in a vacuum, under different rates of change of pressure during pumping time and low (10 K) temperatures. Vacuum conditions were far more destructive to spores than vacuum-ultraviolet irradiation, and UV-B photons were two orders of magnitude more damaging than vacuum-ultraviolet photons. The viability of irradiated spores was also enhanced at 10K. This work, in addition to contributing to the photonic control of the viability of microorganisms exposed under extreme conditions, including decontamination of biological warfare agents, outlines the basis for identifying bio-signaling in vivo using physical methodologies. [ABSTRACT FROM AUTHOR]

The effects of plasma exposure and vacuum-ultraviolet (VUV) irradiation on the mechanical properties of low-k porous organosilicate glass (SiCOH) dielectric films were investigated. Nanoindentation measurements were made on SiCOH films before and after exposure to an electron-cyclotron-resonance plasma or a monochromatic synchrotron VUV beam, to determine the changes of film hardness, elastic modulus, and crack threshold due to these exposures. This permits the effects of ion bombardment and photon bombardment to be analyzed separately. The role of energetic ions was examined with a variety of inert plasma-exposure conditions. The role of VUV photons was analyzed as a function of synchrotron photon energy. It was found that both energetic ions and VUV photons with energies larger than the bond energy of the Si-O bond cause a significant increase in film hardness along with a smaller increase in elastic modulus and crack threshold. Differential Fourier transform infrared spectra and x-ray photoemission spectroscopy results show that the energetic ions affect the SiCOH properties mainly through physical bombardment, during which the ions transfer their momentum to the Si-O-Si backbone and transform them into more energetically stable Si-O-Si network structures. This results in the Si-O-Si network structures becoming densified. VUV photons assist reaction that increase the number of bridging O3=Si-O-Si=O3 bonds and deplete nonbridging O3=Si-O and C-Si=O3 bonds. This increased degree of cross linking in porous organosilicate dielectrics can substantially enhance their hardness and elastic modulus while showing no significant film shrinkage or densification. [ABSTRACT FROM AUTHOR]

We report nanosecond time-resolved measurements of the vacuum ultraviolet (VUV) emission and current waveforms for a planar, surface-discharge plasma display electrode in Xe/Ne mixtures. The 173 nm excimer emission is separately resolved from the overall VUV emission by a removable fused silica filter. The time difference between the maximum of excimer emission and that of resonant atomic emission is measured at high Xe concentration. The decay time of the overall VUV emission decreases strongly as the Xe concentration increases due to three-body collisions leading to Xe[sub 2] formation. The decay time constants versus Xe concentration and pressure are measured and compared with published rate constants. The efficiency of VUV emission increases rapidly from 4% to 10% Xe, but only marginally with further increase to 30% Xe. For fixed Xe ratio, the VUV emission efficiency drops with increasing driving voltage. [ABSTRACT FROM AUTHOR]

Deals with a study which characterized gas-phase products from the nanosecond ultraviolet excimer ablation of polytetrafluoroethylene using mass-resolved vacuum ultraviolet laser photoionization techniques. Methods; Results; Discussion.