1. Lasing via excited state of type A InP/GaInP quantum dots embedded in microdisks.
- Author
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Lebedev, D. V., Mintairov, A. M., Vlasov, A. S., Kulagina, M. M., Guseva, Yu. A., Troshkov, S. I., Juska, G., Pelucchi, E., and Gocalinska, A.
- Subjects
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EXCITED states , *QUANTUM dots , *QUALITY factor , *PHOTOLUMINESCENCE - Abstract
We describe the growth, material characterization, and lasing of InP/GaInP quantum dot (QD) microdisks (diameter D = 2.2 μ m, quality factor Q ∼ 9000) with an emission lasing line of 693 nm (77 K). We demonstrate that MOVPE growth can result in two types of InP/GaInP QDs, differing in height (type A h ∼ 5 –10 nm, type B h ∼ 20 nm), whose emission has different decay lifetimes (τ A = 0.6 ns, τ B = 2.4 ns). We show, importantly for technological microlasing applications, that lasing occurs via the excited states of type A QDs, as inferred from a number of experimental results: power-dependent photoluminescence, time-resolved experiments, and temperature dependence of the generation threshold. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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