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We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in magnetoelectrically coupled heterostructures. Theoretically, we show how a piezoelectric/ferromagnetic (PE/FM) combination can lead to non-volatility in pseudo-magnetization exhibiting overall ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nano-magnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort. [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]