1. Structure and simulation of hydrogenated nanocrystalline silicon.
- Author
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Pan, B.C. and Biswas, R.
- Subjects
- *
SEMICONDUCTORS , *SOLID state electronics , *MOLECULAR dynamics , *NANOCRYSTALS , *THIN films , *OPTOELECTRONICS - Abstract
We simulated hydrogenated nanocrystalline silicon with molecular dynamics calculations using embedding and melt-quenching approaches. The embedding approach generates a well-defined crystallite residing in an amorphous matrix and a structure free of coordination defects. The H-distribution is inhomogeneous with an excess hydrogen density at the strained grain boundary between the nanocrystallite and the amorphous matrix. The amorphous matrix is better ordered in hydrogenated nanocrystalline-Si than in the homogenous amorphous silicon networks. Nanocrystals have been annealed at higher temperature where the nanocrystalline regions shrink in size. Nucleation and growth theory of these nanocrystals is developed. Melt-quenching simulations generate nc-Si structures which do not show a disordered grain boundary but generate a very high density of defects in the amorphous region, which cannot be annealed. The embedding approach may favor structures closer to experimental H-diluted growth conditions. Melt-quenching may better represent structures formed by laser induced recrystallization. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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