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1. Analysis of ordering in GaInP by means of x-ray diffraction.

Author

Liu, Q., Lakner, H., Scheffer, F., Lindner, A., and Prost, W.

Subjects
*SILICON, *SEMICONDUCTOR doping, *PHOTOLUMINESCENCE
Abstract

Presents a detailed characterization of the ordered structure in silicon-doped Ga[sub0.51]In[sub0.49]P. Influence of silicon doping on the ordering in GaInP layers; Analysis of undoped layers grown at various substrate temperatures; Relationships between photoluminescence peak energy and electron concentration of silicon-doped samples at room temperature.

Published
1993
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