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We report a detailed investigation on the optical transitions of strained type II GaAs[SUB0.7]Sb[SUB0.3]/GaAs (100) multiple quantum wells. For the theoretical calculations, both of the elastic deformational potential of intrinsic compressive biaxial strain, and quantum confinement effects are included. The asymmetric photoluminescence spectra reveal the features of excited state transition and quantum confinement Stark effect at high and low temperatures, respectively. The asymmetry features have also been investigated and confirmed by low-temperature photoluminescence experiments under different excitation power. From polarized photoluminescence excitation and photoconductivity spectra, both of the type I and type II optical transitions can also be clearly identified. [ABSTRACT FROM AUTHOR]

Investigates the thermal relaxation of the photoluminescence (PL) in InAs/GaAs quantum dot superlattices having two to more than three times the critical thickness for spontaneous island formation. Role of repopulation in the PL quenching; Attribution of the temperature dependence of PL energy to the dilation of lattice and electron-lattice interaction.