1. A novel bright blue emitting (Ba/Sr)Al2Si3O4N4: Eu2+ phosphors synthesized with BaAlO4 as precursor.
- Author
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Chu, Siqi, Hua, Youjie, Ma, Hongping, Lou, Luyi, and Xu, Shiqing
- Subjects
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SILICON nitride , *PHOSPHORS , *BAND gaps , *ELECTRONIC band structure , *THERMAL stability , *DIPOLE-dipole interactions , *FLUORIMETRY - Abstract
A series of novel blue-emitting Ba 1-x Al 2 Si 3 O 4 N 4 : xEu2+ phosphors were successfully prepared by two-steps high temperature solid state reaction. The results of XRD and SEM showed that the two-steps method obtain less impurities than the traditional one-step method. The electronic band structure of BaAl 2 Si 3 O 4 N 4 (BASON) host was calculated as a direct band gap of 3.662eV by the DFT method. The PLE spectrum of B 1-x ASON: xEu2+ showed a wide band excitation in the wavelength range of 250–450 nm, which can be well matched with n-UV chips. Based on crystal structural and fluorescence lifetime analysis, three emission peaks were obtained by gaussian fitting to explain the asymmetry of Eu2+ emission in the BASON phosphor. The optimal doping concentration of Eu2+ was x = 0.04. According to calculated critical distance (3.24 Å) and a little overlap between PLE and PL spectra, the concentration quenching mechanism was confirmed as both of dipole-dipole interaction and radiation reabsorption. In addition, with the incorporation of Eu2+, the diffuse reflection spectrum of B 1-x ASON: xEu2+ presented a wide absorption peak in the range of 200–500 nm. The PL intensity of Ba 0.96-y Sr y Al 2 Si 3 O 4 N 4 : 0.04Eu2+ tended to rise first and then fall with the increase of Sr2+ concentration. Impressively, the relative emission intensity at 473K still maintained 95.7% compared with room temperature (293K), which indicated the excellent thermal stability of BASON phosphor. Finally, the density of state (DOS) of Ba 1-y Sr y Al 2 Si 3 O 4 N 4 (y = 0, 0.5, 1) were calculated and analyzed to explain the deterioration of thermal stability with the increase of Sr2+ substitution. • The pure-phase of Ba 1-x Al 2 Si 3 O 4 N 4 : xEu2+ phosphors were successfully prepared by two sintering steps with BaAlO 4 as precursor. • The PL intensity of BaAl 2 Si 3 O 4 N 4 : Eu2+ phosphors were significantly enhanced by substitution of Ba2+ with Sr2+ ions. • The BaAl 2 Si 3 O 4 N 4 : Eu2+ phosphors exhibit excellent thermal stability under 423K (97.9%). • The DOS of Ba 1-y Sr y Al 2 Si 3 O 4 N 4 (y = 0, 0.5, 1) were calculated and analyzed to explain the deterioration of thermal stability with the increase of Sr2+ substitution. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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