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Highlights: [•] Al2O3/HfO2/Al2O3 gate stacks has been deposited on Si substrate by ALD. [•] Interface thermal stability related with annealing temperature has been studied. [•] Phase separation at 700°C and silicate formation at 900°C have been detected. [ABSTRACT FROM AUTHOR]

In current work, effects of rapid thermal annealing on the interface chemical bonding states, band alignment, and electrical properties of atomic-layer-deposition-derived HfAlO/Al 2 O 3 gate stack on Si substrates have been studied by X-ray photoemission spectroscopy (XPS), UV–Vis transmission spectroscopy, and electrical measurements. XPS analyses have shown that HfAlO alloy and mixed silicate (Hf-Al-O-Si) increase after post-deposition annealing process. By means of UV–Vis transmission spectroscopy measurements, reduction in band gap for 400 o C-annealed sample has been observed. Accordingly, reduction in the valence band offset and increase in the conduction band offset have been detected for HfAlO/Al 2 O 3 /Si gate stack annealed at 400 °C. Various current conduction mechanisms, such as Poole-Frenkel emission, Fowler-Nordheim (FN) tunneling, and space-charge-limited (SCL) conduction, have been analyzed. Detailed electrical measurements reveal that current conduct mechanisms is SCL conduction at lower field region and FN tunneling and SCL conduction are dominant conduction mechanism at higher field region. [ABSTRACT FROM AUTHOR]

Deposition of HfTiO x gate dielectric films on n-type Si and quartz substrates by sol–gel technique has been performed and the optical, electrical characteristics of the as-deposited HfTiO x thin films as a function of baking temperature have been investigated. The components and optical properties of HfTiO x thin films related to baking temperature are investigated by energy dispersive spectrometer (EDS), ultraviolet–visible spectroscopy (UV–Vis), and spectroscopy ellipsometry (SE). By measurement of EDS, the Hf/Ti molar ratio of HfTiO x thin films is calculated to be about 1:1.20 at all baking temperature. The increase in band gap is observed with the increase of baking temperature. Additionally, the electrical properties based on Al/Si/HfTiO x /Al capacitor are analyzed by means of the high frequency capacitance-voltage ( C-V ) and the leakage current density-voltage ( J-V ) characteristics. Results have shown that 200 °C-baked sample demonstrates good electrical performance, including larger dielectric constant of 23.31 and lower leakage current density of 5.12 × 10 −5 A/cm 2 at the gate voltage of 1 V. Additionally, the leakage current conduction mechanisms as functions of baking temperatures are also discussed systematically. [ABSTRACT FROM AUTHOR]

The effect of nitrogen on the band offset of sputtering-derived InZnGaO 4 (IGZO)/Si heterostructures has been systematically investigated by x-ray photoelectron spectroscopy (XPS) measurements. Elemental analysis indicates that nitrogen has been successfully incorporated into the IGZO film. By using In 3d 5/2 , In 3d 3/2 and Ga 3d core level (CL) XPS spectra as references, values of valence band offsets (Δ E v ) of have been determined to be 2.56 ± 0.02 and 2.44 ± 0.02 eV for IGZO/Si and IGZO:N/Si heterojunctions, respectively. Using the experimental band gap of 3.59 and 3.50 eV of the IGZO/Si and IGZO:N/Si, the calculated values of conduction band offset (Δ E c ) is 0.09 ± 0.01 and 0.06 ± 0.01 eV, respectively. The results indicate that nitrogen incorporation leads to the reduction in band gap and Δ E v and the slight effect on the Δ E c has also been detected. [ABSTRACT FROM AUTHOR]

Interfacial thermal stability and band alignment of ALD-derived Al 2 O 3 /HfO 2 /Al 2 O 3 /Ge gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and spectroscopy ellipsometry (SE) as a function of annealing temperature. It has been found that reduction in interfacial GeO x component and formation of HfAlO alloy layer have been detected with increasing the annealing temperature from 500 to 700 °C. Combined with analysis from XPS and SE, the increase in conduction band offset and reductions in band gap and valence band offset have been observed. When annealing temperature reaches 700 °C, the valence band offset has been reduced to 0.88 eV, which is smaller than the minimal requirement of Δ E v values for high- k dielectrics and, thus, leads to unacceptably high leakage currents. Therefore, annealing temperature should be carefully controlled to guarantee excellent properties of Al 2 O 3 /HfO 2 /Al 2 O 3 /Ge gate stacks in future Ge-based MOS devices. [ABSTRACT FROM AUTHOR]

Highlights: [•] Sputtering-derived Hf1−xTi x O2 gate dielectrics have been deposited on Si substrates. [•] Increase in crystallization temperature and reduction in Eg have been observed. [•] Formation of silicate layer for 9% TiO2-doped HfO2/Si sample has been detected. [ABSTRACT FROM AUTHOR]

Abstract: CoFe2O4/Co0.7Fe0.3 nanocomposite permanent magnets have been synthesized in one step by a hydrothermal method at reaction temperatures of 80, 120, 140, 160 and 180°C and characterized by XRD, SQUID, SEM, (HR)TEM, and SAED. All samples consisted of octahedral CoFe2O4 particles and spherical-like Co0.7Fe0.3 particles. The maximum magnetization and coercivity were 191emu/g and 1311Oe, respectively, values not previously observed for the CoFe2O4/Co0.7Fe0.3 system. This maximum magnetization was attributable to the larger mass ratio of Co0.7Fe0.3 to CoFe2O4, which were in intimate contact. Magnetic dipolar interaction plays a crucial role in magnetic properties and leads to the reduction of the magnetization and the Mr /Ms ratio. The coercivity of all samples exhibited complex variation with reaction temperature and its mechanism may deserve further investigation. [Copyright &y& Elsevier]