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Coumarin doped with poly(3-hexylthiophene)/p-Si photodiodes were prepared by the drop-casting technique. The current–voltage characteristics of the prepared diodes with the structure of Al/P3HT:Coumarin/p-Si/Al diodes were investigated under dark and various illumination intensities using both I–V and C–V methods. Using both illuminated DC and transient I–V and C–V measurements, the photocurrents are shown to depend on light intensity with the P3HT:Coumarin ratio influencing photoresponsivity. The photocurrents increase with increasing illumination intensity. C–V measurements show that the capacitance of the diode depends on voltage, frequency and illumination, indicating the existence of a continuous distribution of interface states that can be described in terms of organic-organic polymer blend domains in additional to the well studied metal-semiconductor interface states. The best responses were found to be for the diode having 10% Coumarin weight. These results suggest that the Al-p-Si/P3HT:Coumarin/Al diode can be used as a photosensor. [ABSTRACT FROM AUTHOR]

A photodiode was fabricated as a Schottky contact using Cu-Al-Mn shape memory alloy and p-Si substrate. The alloy was characterized by some characterization techniques such as (SEM), XRD and DSC. The electrical and photovoltaic properties of the prepared Schottky diode were investigated under various illumination intensities and frequencies. The illumination dependent I-V measurements showed that the diode exhibited a photovoltaic behavior. The electronic parameters of the diode were obtained using various theoretical models. The photo transient behavior of the diode was analyzed under solar light. The admittance measurements indicate that the diode exhibits a dispersive capacitance behavior. The results indicate that the Schottky diode could be used in optic device applications. [ABSTRACT FROM AUTHOR]