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• The Cu 26.08 Al 2.85 Mn 1.86 Mg/ n -Si/Al Schottky diode was fabricated. • The prepared shape memory alloy was characterized by using DSC and X-Ray Diffraction techniques. • The fabricated device is very sensitive to light. • The prepared device is strongly dependent on the voltage and frequency • The fabricated structure can be utilized in optoelectronic applications. [Display omitted] In this study, the copper-aluminum-manganese-magnesium (Cu–Al–Mn–Mg) shape memory alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics of the diode were examined by using illumination intensity and frequency dependent current and admittance measurements. Basic electrical parameters such as barrier height (ϕ b0), ideality factor (n), and series (R s) and shunt (R sh) resistances of the generated diode were obtained from the measured current-voltage (I–V) data using thermionic emission (TE) theory. Illumination impact on the diode parameters indicate that the device displays photoconducting behavior. Furthermore, the ϕ b0 value was established from Norde method. There is a good agreement between ϕ b0 values acquired from conventional I-V and Norde method. It was observed that the rise in the applied illumination intensity increased the values of R s and R sh. In addition, the admittance (Y=G+iωC) measurements were carried out in a wide frequency range. As a result of the experimental measurements, it has been shown that the produced CuAlMnMg/n-Si Schottky diode can be operated in optoelectronic practices, especially as a photodiode. [ABSTRACT FROM AUTHOR]