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Sm 2 Zr 2 O 7 and Gd 2 Zr 2 O 7 are two promising transparent ceramic materials with high density and effective atomic number. However, the phase diagram of Gd 2 O 3 -Sm 2 O 3 -ZrO 2 system has not been systematically studied. To determine the phase relationship of the ternary system Gd 2 O 3 -Sm 2 O 3 -ZrO 2 at 1600°C and 1400°C, a serious of ceramic samples were prepared and studied by X-ray diffraction, scanning electron microscope, and electron probe microanalysis. In the range of 66.6 mol.% ZrO 2 , the solubility of Gd 2 O 3 is 20–22.5 mol.% at 1600°C, and the binary intermediate phases Sm 2 Zr 2 O 7 and Gd 2 Zr 2 O 7 form a continuous solid solution at 1400°C. Using the experimental data as a foundation, thermodynamic modeling was performed using the approach. Based on the experimental data, the mixing parameters of fluorite, B and C phases were optimized, and thermodynamic modeling was performed using the CALPHAD (CALculation of PHAse Diagram) method. For the first time, a self-consistent database for Gd 2 O 3 -Sm 2 O 3 -ZrO 2 ternary system was established. • Phase equilibria of Gd 2 O 3 -Sm 2 O 3 -ZrO 2 system were studied experimentally at 1600°C and 1400°C. • At 1400°C, Gd 2 Zr 2 O 7 and Sm 2 Zr 2 O 7 form a continuous solid solution, and at 1600°C, the solubility of Gd 2 O 3 is 20-22.5 mol%. • A set of self-consistent thermodynamic description for the Gd 2 O 3 -Sm 2 O 3 -ZrO 2 system was established for the first time. [ABSTRACT FROM AUTHOR]

The transition metal Manganese (Mn)-doped Zinc Oxide (ZnO) nanoparticles were synthesized using the sol-gel method. The nanomaterials ZnO and Zn 1-x Mn x O (x=0–0.15) formation, their crystal structure, and morphological properties were confirmed by X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) analysis of the materials. All the studied materials show hexagonal wurtzite structure with the particle size in nanometres. The optical properties of transition metal Mn-doped ZnO nanomaterials were explored by the absorption and transmission spectra. The band gap of the nanomaterials decreases with the increase of Mn doping concentration from 3.01 to 3.26 eV. The mobility and electrical conductivity of the Mn-doped ZnO thin films show a decreasing trend with the increase of Mn doping concentration in ZnO. The Mn-doped materials were investigated for supercapacitor and photodiode applications. The Zn 0.90 Mn 0.10 O nanomaterials show the maximum specific capacitance, power and energy density of ∼ 220 F/g, 2202 W/kg and 1.15 Wh/kg, respectively. The electrochemical properties confirm that the doping of ZnO opens a new window for its application in energy storage devices. The ZnO and Mn-doped ZnO were used as an electron transport layer in perovskite MAPbI 3 photodiodes. Under the Illumination of blue (465 nm) light, the highest detectivity of undoped ZnO perovskite photodiode is ∼4.5×1010 Jones and doped ZnO perovskite photodiode is 0.7×1010 Jones, respectively. The low mobility of charges and unfavorable energy level alignment of Mn-doped ZnO with MAPbI 3 thin films is the reason for the decrease in photo detectivity. Our studies demonstrate that the Mn-doped ZnO nanomaterials and their thin films have avenues for potential application in energy storage devices and photodiodes of perovskite MAPbI 3. [Display omitted] • The hexagonal wurtzite crystal structure was achieved for Mn-doped ZnO nanomaterials. • The band gap has a decreasing trend with the increase of Mn doping concentration. • The highest specific capacitance for undoped ZnO, 0.05,0.10 and 0.15 of Mn-doped ZnO nanomaterials are 200, 185, 220, and 172 Fg−1, respectively. • The internal resistance, polarization and mechanical stress caused by the insertion and removal of ions from the electrode may be the reason of the decrease in specific capacitance. • The highest detectivity for MAPbI 3 thin film PDs A and B is ∼4.5×1010 jones and 0.7×1010 jones upon 5 mW/cm2 UV Illumination (635 nm) light at an applied bias of −4 V. [ABSTRACT FROM AUTHOR]

The phase stability and quality of CsPbI 2 Br perovskite film directly determines the performance of perovskite solar cells (PSCs). However, there is a lack of research on phase stability of perovskite films of PSCs. Here, by simply controlling precursors with specified ratios and solvents, the phase stability, charge transfer resistance and electron lifetime improve significantly which is useful for high performance in perovskite solar cells. Besides this, the information about trap centres by a novel technique Charge Deep Level Transient Spectroscopy (Q-DLTS) also helps to improve efficiency of perovskite solar cells. In this work, CsPbI 2 Br perovskite thin films have been synthesized using simple solution processing method, by varying CsBr and PbI 2 precursors with specified ratios of 1.05 M:1 M and 1.10 M:1 M in Dimethysulfoxide (DMSO) and Dimethyl formamide (DMF). The CsPbI 2 Br film with ratio of 1.05:1 has more phase stability in ambient air at room temperature than that of 1.10:1. Drop casting method was adopted for thin films preparation and structurally cubic phase of perovskite films obtained by X-ray diffraction (XRD). Scanning electron microscope (SEM) showed more homogeneity on the surface of the sample with ratio 1.05:1 and energy dispersive x-ray spectroscopy (EDX) confirmed the presence of same amounts in chemical composition. Fourier transform infrared spectroscopy (FTIR) transmittance spectra showed that main peak is generally observed because of stretching vibrations of lead-iodide ions. In UV–visible (UV-Vis) little effect was observed on the energy band gaps i.e. 1.93 eV for 1.05 M:1 M and 1.96 eV for 1.10 M:1 M. The electrochemical impedance spectroscopy (EIS) measurements were performed for electronic charges accumulation on the surface of the films which showed semi-circles Nyquist plots and frequency dependent Bode plots were used to find electron lifetime. The charge transfer resistance (R ct) decreased from 52Ω to 45Ω and electron life time were approximately equal to 0.10 s and 0.09 s for the ratio of 1.10:1 and 1.05:1. I-V measurements showed an Ohmic contact formation providing insights into defect concentrations with a linear response to applied bias. Recombination lifetimes were investigated using transient photovoltage (TPV) at various biases, no correlation between the applied bias and recombination lifetime was found. Q-DLTS indicated presence of 3 trap centers for the charge carriers which were actively responsible for degradation of the perovskite material, these traps serve as recombination centres that reduce the overall power conversion efficiency (PCE) of solar cells. Photoluminescence spectroscopy (PL) analysis was done to verify the energy bandgap value which was found similar in comparison to UV–VIS. • CsPbI 2 Br perovskite thin films have been synthesized by simple solution processing method, and drop casting method was adapted for thin films preparation with ratios of 1.05:1 and 1.10:1. • Optical bandgap (1.93 eV) was also verified using Photoluminescence spectroscopy (PL) which is approximately similar in comparison to obtained from UV–VIS. • The charge transfer resistance (R ct) decreased from 52Ω to 45Ω for the ratio of 1.10:1 and 1.05:1 respectively. • From Ohmic and trap filled limited (TFL) recombination lifetimes were investigated using transient photovoltage (TPV) at various biases to determine recombination rates. • For 1.05:1 ratio, charge deep level transient spectroscopy (Q-DLTS) have shown 3 trap centers for the charge carriers. [ABSTRACT FROM AUTHOR]

In this study, we reported the sol-gel production of cerium (Ce) and beryllium (Be)-doped calcium aluminate (CaAl 12 O 19) and its luminescence properties for optically stimulated luminescence (OSL) dosimetry and light-emitting applications. Structural, morphological and elemental characteristics of the samples were examined by x-ray diffraction (XRD), Scanning electron microscope (SEM)/energy dispersive spectrum (EDS), x-ray fluorescence (XRF) and Inductively Coupled Plasma-Mass Spectroscopy (ICP-MS) techniques. The maximum OSL intensity was achieved with 0.5 and 2% mol concentrations of Ce and Be dopants, respectively. We investigated the OSL and thermoluminescence (TL) properties of Ce and Be-doped CaAl 12 O 19 by measuring energy storage for 24 h, dose-response in the range of 0.1 and 20 Gy, and reusability of the samples for 15 cycles. Photometric properties of the phosphors were investigated by evaluation of CIE chromaticity coordinate (x, y), CCT, and colour purity using its corresponding photoluminescence (PL) emission spectra. We also applied computerized glow curve deconvolution (CGCD), various heating rate methods, and the T m -T stop procedure to determine the trap localizations associated with the TL glow curve. The results of this study point out that CaAl 12 O 19 crystals have the potential to be used as OSL dosimetry when appropriate dopants are used. This study may offer new possibilities in radiation dose detection and monitoring. • XRD, SEM&EDS and XRF analyses proved the CaAl 12 O 19 (CAO) ceramics were successfully synthesized via the Sol-Gel method. • TL, RL and PL emissions CAO ceramics originate from similar luminescence processes • OSL signals were found to be linear between 0.1 and 20 Gy, reusable up to 15 repeating experimental cycles, and low fade. • The trap parameters of the material were estimated using T m -T stop , various heating rates and CGCD techniques • The evaluated CIE chromaticity coordinates and color purity showed the phosphor is in the UV region of the color space. [ABSTRACT FROM AUTHOR]

In this study, the fabrication of single grain bulks (Y,Er)Ba 2 Cu 3 O 7−x "(Y,Er)−123" superconductors is well studied to enhance high superconducting performance in the mixed binary system between yttrium and erbium elements. A series of isothermal experiments of mixed (Y,Er) 2 BaCuO 5 "(Y,Er)−211" binary system has been prepared at various constant temperatures for 50 hours to optimize the heating pattern to produce large-sized (Y,Er)−123 bulks single domain. (Y,Er)−123 bulks were fabricated using the infiltration growth (IG) process. All samples obtained were studied by X-ray diffraction (XRD), Scanning electron microscope (SEM), Superconducting quantum interference device (SQUID), and trapped field measurements. In isothermal experiments, it revealed that the optimum temperature obtained to grow a good (Y,Er)−123 bulks was at 985 °C. All samples showed T c-onset from 89 K to 91 K indicating all samples show superconducting nature. Microstructural analysis indicated that the presence of non-superconducting (Y,Er)−211 fine particles within the (Y,Er)−123 matrix improved the J c values up to 41.60 kA/cm2. On the other hand, slow cooling bulk (Y,Er)−123 has been conducted after obtaining the optimum growth temperature window from the isothermal experiment. (Y,Er)−123 bulks were fabricated using a slow cooling IG process. It revealed that the homogenous distribution of (Y,Er)−211 particles in the (Y,Er)−123 matrix improved the superconducting performance, J c, and trapped field. As a result, J c obtained for a single domain of (Y,Er)−123 bulk was 43.03 kA/cm2 at 77 K, H// c -axis and self-field. • This approach is useful and simple to obtain a good optimum temperature for binary system Y,ErBCO. • We use Y211 and Er211 powders synthesis by conventional solid-state method. • An isothermal study was conducted to produce Y,Er-BCO bulk superconductor. • High critical current density, J c was greatly improved. [ABSTRACT FROM AUTHOR]

The microstructure, phase composition, precipitates evaluation, casting, and mechanical properties of the novel cast Al-4Cu-2.1Er-1Mg-0.2Zr-0.2Cr-0.15Fe-0.15Si-0.1Ti alloy were analyzed using by optical microscope, scanning and transmission electron microscopes, differential scanning calorimetry, thermodynamic calculations, hot cracking and mechanical properties measurements. The positive effect of Cr as a substitution of Mn on plasticity and precipitation strengthening was demonstrated. The 0.2Zr, 0.2Cr and 0.1 Ti as a grain refiners provide a fine grain size of 25 μm in the as-cast state due to primary Al 75–80 Cu 10–12 Er 3–4 Cr 7 phase particles formation as a nucleation centers of Al. The hot cracking index (HCI) of the AlCuErMgCr alloy was 12–14 mm which is similar with HCI of the cast Al-Si-Cu-Mg alloys. The good casting properties in the AlCuErMgCr alloy achieved due to a fine grain structure and narrow solidification range. The contribution of the Al 3 (Zr,Er) (40 nm), Al 45 Cr 7 (6 nm), and S'(θ') (100/5 nm) precipitates is 38.5 MPa, 140.4 MPa, and 198.9 MPa and the calculated contribution from dislocation and precipitates is 262.3 MPa. The ultimate tensile strength (UTS) and elongation (El.) of the AlCuErMgCr alloy are 372 MPa and 6% which is higher in 16.6% and 150%, respectively, than in the Mn-containing alloy. Novel alloy has an excellent combination of yield strength (YS) and plasticity at 20–250°C. The YS and El. are 301 MPa and 6% and 225–250 MPa and 4.6–11.5% at 20 and 200–250°C, respectively. The rupture strength at 250°C after 100 h (σ 100 250) is 106 MPa. Mechanical and casting properties of the novel alloy are superior to the properties of commercial 201.0 (Al-Cu-Mn-Mg-Ag-Ti) alloy. • Cr, replacing Mn, had a positive impact on both plasticity and precipitation strengthening. • 0.2Zr, 0.2Cr, and 0.1Ti as grain refiners resulted in the formation of primary Al 75–80 Cu 10–12 Er 3–4 Cr 7 phase particles. • The AlCuErMgCr alloy displayed an ultimate tensile strength (UTS) of 372 MPa and an elongation (El.) of 6%. • The rupture strength at 250°C after 100 hours was determined to be 106 MPa. [ABSTRACT FROM AUTHOR]

The microstructure and properties of the aged Cu-Cr-Zr-Nb alloy were studied by means of hardness tester, universal tensile testing machine, conductivity meter, X-ray diffraction, scanning electron microscope, and transmission electron microscope. The results indicated that the hardness and TS (tensile strength) of the Cu-Cr-Zr-Nb alloy increased first and subsequently decreased with increasing the aging temperature. Nevertheless, the electrical conductivity is gradually increasing. The aged Cu-Cr-Zr-Nb alloy was mostly made up of Cu matrix, Cr particles, Cr 2 Nb, and CuZr compounds. Due to the effects of dislocations accumulated by cold drawing and twins produced during the aging process, the softening temperature of the alloy reached 590 ℃. When the Cu-Cr-Zr-Nb alloy was aged at 490 ℃, < 111 > replaced < 110 > in the optimal orientation of the alloy, and the KAM (kernel average misorientation) value inside the alloy was the largest. The alloy exhibited great comprehensive properties at 490 ℃ for 1 h, with a hardness of 144.4 HBW, a TS of 521 MPa, and an electrical conductivity of 78.3%IACS. The contribution value of YS (yield strength) at different aging temperatures was further calculated. The computational results showed that precipitation strengthening was the main strengthening mechanism of the Cu-Cr-Zr-Nb alloy, and fine-grained strengthening and dislocation strengthening simultaneously played a supplementary role. • Due to the effects of dislocations accumulated by cold drawing, precipitation strengthening of Cr and twins produced during the aging process, the softening temperature of the Cu-Cr-Zr-Nb alloy reaches 590 ℃. • The Cu-Cr-Zr-Nb alloy exhibits great comprehensive properties at 490 ℃ for 1 h, with a hardness of 144.4 HBW, a tensile strength of 521 MPa, and an electrical conductivity of 78.3 %IACS. • The computational results show that precipitation strengthening is the main strengthening mechanism of the Cu-Cr-Zr-Nb alloy. [ABSTRACT FROM AUTHOR]

Developments in engineering and medicine have allowed patients' health and quality of life to be supported by implants. Unfortunately, widely used titanium-based alloys with aluminum and vanadium are not ideal materials. The first problem is a mechanical mismatch between human bone and the implant material, and the second issue is the presence of Al or V, which are harmful for the human body and health. This article focuses on the holistic design and production of titanium-based materials with vital elements. The zoned, gradient element can exhibit better mechanical properties and improve the connection between the implant and the bone. The samples in two constructions were built with two different zones. The powders for samples were prepared using the powder metallurgy technique with sieve separation. Phillips X-ray X′Pert diffractometer and PDF4 + database performed the phase composition analysis. The Scanning electron microscope allow the samples observation. Stereological methods assessed porosity and PAR M370 Scanning Electrochemical Workstation. The designed technology based on the powder metallurgy method allows for producing functional, two-zoned graded materials with variable porosity. The phase composition analysis confirmed partially synthesis. Additionally, the observation of the microstructure of the sintered samples revealed the presence of two permanently connected zones. Preliminary mechanical research was conducted to evaluate the potential use of the material as an implant material. The proposal to use two-zone construction of components for implants is dictated by the possibility of personalizing implants for patients, taking into account personal characteristics and needs. [Display omitted] • The functionally graded materials based on vital elements were successfully fabricated using powder metallurgy method. • Highly porous FGM with interconnected porosity was prepared by powder metallurgy. • The porous and microstructure evolution in each gradient layer of FGM is revealed. • The effect of Tin use as Process Control Agent were confirmed and allow to obtain more uniform powders. [ABSTRACT FROM AUTHOR]

This study used a sonochemical reactor to synthesize Co 0.50 Ni 0.50 La x Fe 2−x O 4 (0.00⩽x⩽0.2; step 0.05) spinel ferrites. X-ray diffraction spectra and scanning electron microscope (SEM) images were employed to verify and authenticate the physical characteristics, such as crystalline structure and morphology of the Co 0.50 Ni 0.50 La x Fe 2−x O 4 spinel ferrite particles. These structural analyses are targeted to confirm the singular-phase cubic Fd-3 m spinel ferrite nature. It has been noted from the SEM images that every particle resembles a sphere-like morphology. The real dielectric constants and dielectric loss of the prepared Co 0.50 Ni 0.50 La x Fe 2−x O 4 spinel ferrites were measured. The blocking (T B) and Curie (T C) temperatures of the spinel ferrites can also be explored and measured using temperature-dependent susceptibility and ultrasonic non-destructive techniques (NDT), respectively. The difference between the T B and T C is quite small. This observed difference implies that finding the phase transition temperature of spinel ferrites using ultrasonic NDT testing is a more flexible process than any other conventional technique. The room-temperature hysteresis shows that these La3+ doped Co 0.50 Ni 0.50 La x Fe 2−x O 4 ferrite samples might be more suitable for applications. • Influence of La3+ ions in Co 0.50 N i0.50 Fe 2 O 4 nanoferrite were explored. • Decrease in M s and T C was observed with increasing La3+ ions. • Phase transition explored through temperature-dependent susceptibility and ultrasonic measurement. [ABSTRACT FROM AUTHOR]

The Mg-Ni-based alloys have been extensively investigated as negative electrode materials in Nickel-Metal Hydride (Ni-MH) batteries. In this work, two Mg-Ni-based samples (Mg 71 Ni 29 and Mg 72.6 Ni 25.3 Gd 1.1) were prepared by means of melting. The X-ray diffraction (XRD), scanning electron microscope (SEM), galvanostatic charging/ discharging and other electrochemical measurements were used for the investigation. The results show that the Mg 71 Ni 29 and Mg 72.6 Ni 25.3 Gd 1.1 alloys include the characteristic peaks of Mg 2 Ni and the less strong characteristic peaks of Mg and MgNi 2 phases. The diffraction peak of the major phase Mg 2 Ni of the Mg 72.6 Ni 25.3 Gd 1.1 alloy is shifted to a small angle and its unit cell volume increases. With the addition of Gd, the alloy electrodes exhibits better cycling stability. After 50 charge/ discharge cycles, the capacity retention rate of the alloy electrode increase from 16% (Mg 71 Ni 29) to 22% (Mg 72.6 Ni 25.3 Gd 1.1). However, the maximum discharge capacity of the alloy electrode decrease from 134.3 mAh/g (Mg 71 Ni 29) to 91.9 mAh/g (Mg 72.6 Ni 25.3 Gd 1.1). The Mg 72.6 Ni 25.3 Gd 1.1 alloy possess lower limiting current density I L and exhibit relatively high corrosion resistance against the alkaline solution. After Gd doping, the charge transfer capacity of the Mg 72.6 Ni 25.3 Gd 1.1 alloy surface is increased. • The addition of Gd positively impacts the cycling stability of the alloy electrodes. • The Gd-doped alloy exhibits the superior corrosion resistance compared to the Gd-free alloy. • The electrode surface of the Gd-doped alloy demonstrates an augmented capacity for charge transfer. • The solid solubility of Gd atoms in the Mg-Ni-based alloys were verified. [ABSTRACT FROM AUTHOR]

Energy storage in flexible supercapacitor devices extensively depends on electrode design with good electrochemical as well as mechanical properties. Here, a cost-effective and scalable method is proposed for the synthesis of a reduced graphene oxide/ruthenium oxide (rGO/RuO 2) composite thin film for flexible supercapacitor. The successive ionic layer adsorption and reaction (SILAR) method used to synthesize rGO/RuO 2 composite electrode allowed the synthesis of amorphous RuO 2 with optimized rGO composition. The morphological structure of rGO/RuO 2 composite examined using a scanning electron microscope showed compact spherical microparticles coated on rGO sheets. The electrochemical measurements of rGO/RuO 2 composite electrode revealed that the composite material achieved a specific capacitance of 1371 F g−1 at a scan rate of 5 mV s−1. Due to the combined impact of rGO and RuO 2 , a flexible solid-state asymmetric supercapacitor (FSS-ASC) of configuration rGO/RuO 2 /PVA-H 2 SO 4 /WO 3 exhibited C s of 114 F g−1 at 5 mV s−1 with 88% of capacitance retention after 5000 galvanostatic charge-discharge (GCD) cycles. The FSS-ASC provided a remarkable specific energy of 23 Wh kg−1 and a specific power of 613 W kg−1. The electrochemical features of rGO/RuO 2 composite show a promising way to fabricate flexible supercapacitors. [Display omitted] • The rGO/RuO 2 composite synthesized using facile SILAR method. • The synergistic impact between rGO and RuO 2 enhanced capacitive performance. • The C s of 1371 F g−1 was achieved for rGO/RuO 2 electrode in 1 M H 2 SO 4 electrolyte. • The FSS-ASC device delivered an S E of 23 Wh kg−1 at 613 W kg−1 S P. [ABSTRACT FROM AUTHOR]

The Cd 0.96 Zn 0.04 Te (211) crystal is widely recognized as the optimal substrate for epitaxy growth of HgCdTe material. However, its further application is significantly hindered by size and cost limitations. CdZnTe films grown on GaAs substrates by close spaced sublimation may present a promising substrate for epitaxial HgCdTe. In this work, we successfully prepared high quality CdZnTe (133) films on GaAs (211) substrate. The results of scanning transmission electron microscope and selected-area electron diffraction reveals different crystal orientation between GaAs and CdZnTe, which can effectively accommodate the large lattice mismatch. The crystalline quality of the CdZnTe film was improved by introducing a ZnTe buffer layer, resulting in reduction in the etch pit density from 3.2 × 105 to 2.6 × 105 cm−2; a decrease in the full width at half maximum from 57 to 34″, and a lower surface roughness from 9.88 to 3.69 nm. The incorporation of the ZnTe buffer layer prompt the formation of CuPt-type ordered CdZnTe regions at the interface between the CdZnTe film and ZnTe, efficiently relieving the misfit strain originating from GaAs and ZnTe interface. Additionally, a two-step growth method was employed to adjust the Zn content of the film surface by controlling the growth temperature. Diverse lattice constant CdZnTe film is ready to further epitaxial growth of HgCdTe material with different bandgap. • CdZnTe (133) epitaxial films were prepared on GaAs (211) by Close Spaced Sublimation. • High quality CdZnTe (133) films are prepared by introducing a Zn 1−x Cd x Te/ZnTe buffer layer. • The formation of a CuPt-type CdZnTe ordered regions effectively release the misfit strain. • A two-step growth of CdZnTe was employed to precise control over the Zn content in the films. [ABSTRACT FROM AUTHOR]

The present paper is centred around the investigation of the structural, electrical, and magnetic properties displayed by the novel perovskite polycrystalline La 0.7 Pb 0.3 Mn 1−y V y O 3 (y = 0 – 0.1) prepared via the conventional solid-state technique. The structural properties of the samples were assessed through the utilisation of X-ray diffraction (XRD) analysis. Subsequently, the obtained diffraction data underwent refinement employing Rietveld refinement techniques in order to determine the structural parameters of the samples a , b , c , V and Mn–O bond length and angle. The study of X-ray diffraction (XRD) peaks reveals that all the samples exhibited crystallization in a single phase, devoid of any impurities. All of the samples exist in rhombohedral orientation with a space group of R-3c. The tolerance factor of the samples was calculated in order to assess the severity of lattice distortion, decrease from 0.872 (y = 0) to 0.831 (y = 0.1). The microstructural characteristics of the samples were analysed using a field-emission scanning electron microscope (FESEM). The morphology results reveal that a rise in the amount of V leads stimulates the grain growth in the sample, as evidenced by the increase in grain size from 2.17 µm (y = 0) to 3.71 µm (y = 0.1). The Fourier transform infrared (FTIR) analysis revealed an absorption range of 500 – 600 cm-1, which is indicative of the Mn–O bond deformation vibration. This observation suggests the presence of a MnO 6 bond in the sample. The Tauc plots derived from the UV-Vis spectroscopy data reveal a notable increase in the optical bandgap (E opt) as the concentration of V increases. Specifically, the E opt values rise from 1.71 eV (y = 0) to 2.30 eV (y = 0.1), falling within the range typically observed for semiconductor materials. A distinct metal-insulator transition was observed in all of the samples, exhibiting a range of T MI values ranging from 250 K to 292 K. The scattering model was employed to determine the itinerant e g behaviour in the low temperature region, whilst the SPH model was used to explore the conduction behaviour in the high temperature region. The magnetic characteristic of the samples was investigated using the Alternating Current Susceptibility (ACS) and Vibrating Sample Magnetometer (VSM) techniques, which confirms the existence of a shift in phase from ferromagnetic (FM) to paramagnetic (PM). The T C value exhibits a declining trend from 298.8 K (y = 0) to 274.8 K (y = 0.1). [Display omitted] • The La 0.7 Pb 0.3 Mn 1−y V y O 3 (y = 0 – 0.1) samples crystallized in Rhombohedral structure with a space-group of R-3c. • Modification in metal-insulator transition as T MI values decrease from 292 K (y = 0) to 250 K (y = 0.1) • T C value indicate a decreasing pattern as the V concentration increases, from 298.8 K (y = 0) to 274.8 K (y = 0.1) [ABSTRACT FROM AUTHOR]

Multiferroics, specifically magneto-electric materials that couple the ferroelectric and ferromagnetic responses, have boosted researchers' interest in fabricating energy storage devices. For this purpose, we synthesized the perovskite-based triphasic composites using sol–gel auto- combustion and solid–state reaction route. The presence of pure perovskite phases and lattice parameters were noted by X-ray diffraction analysis. Further, Rietveld's refinement confirmed the precision of phase analysis with a high degree of goodness of fit. The homogenous and uniform growth of grains for 0.1BiFeO 3 + 0.7BaTiO 3 + 0.2Nd 0.5 Dy 0.5 MnO 3 composite was seen by field emission scanning electron microscope and scanning transmission electron microscope. The perfect match between empirical elemental composition and prepared composites was determined by energy-dispersive X-ray spectroscopy. The highest remanent, maximum polarization, recoverable energy density, and ferroelectric efficiency were observed for the composite mentioned above. Furthermore, mathematical modeling via Python was carried out with ferroelectric data, and a mathematical relation was derived between the electric field and dielectric constant to observe the electro-optic Kerr effect. Similarly, the above-mentioned composite was seen with the highest coercive field, remanent, and maximum magnetization by M–H loops. Finally, the variation in polarization by changing the magnetic field confirmed M-E coupling and declared this 0.1BiFeO 3 + 0.7BaTiO 3 + 0.2Nd 0.5 Dy 0.5 MnO 3 triphasic composite as best candidate for energy storage devices. [Display omitted] • Facile synthesis of impurity free and stable perovskite-based ternary composites at RT • Optimization of ferroelectric hysteresis loops by inculcating magnetic phases in composite samples • Mathematical modelling-based optimization of electro-optic Kerr effect in composite samples • Transformation from diamagnetic to antiferromagnetic attributes and magnetic reversal behavior • Co-existence of ferroelectric and magnetic orderings empowering M-E coupling via strain mediation [ABSTRACT FROM AUTHOR]

Surface coating had been widely acknowledged as an effective method to improve the electrochemical performance of the cathodes for lithium-ion batteries (LiBs). In this study, a high-conductivity Ti 0.05 V 1.96 O 5 (TVO) coating was successfully deposited on the surface of Li(Ni 0.8 Co 0.1 Mn 0.1)O 2 (NCM811) particles. The crystal structure, micro morphology and element composition of the resulted NCM811 @TVO samples were evaluated using X-ray diffractometer (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. Subsequently, the electrochemical performance of NCM811 @TVO cathodes were evaluated by galvanostatic charge/discharge tests (GCDT) and electrochemical impedance spectroscopy (EIS). The experimental results suggested that incorporating a TVO coating on the NCM811 cathode effectively enhanced both the rate capability and the cycling stability. Furthermore, first-principles calculation based on the density functional theory (DFT) were performed to elucidate the distinct electronic structure and Li ion migration behavior of V 2 O 5 and TVO. The DFT calculation demonstrated that the introduction of Ti ions into the V 2 O 5 leaded to the formation of small polarons and excessive free electrons, while significantly reduced the energy barrier for Li+ migration along [100] direction. [Display omitted] • The T 0.05 V 1.96 O 2 (TVO) coating layer was successfully prepared. • The TVO coating was provided with enhanced conductivity and Li+ diffusion coefficient. • First-principles calculation was used to investigate the structure and properties of the TVO coating. [ABSTRACT FROM AUTHOR]