1. Pressureless sintering behaviour and mechanical properties of Fe2O3-containing SiC ceramics.
- Author
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Feng, Dong, Ren, Quanxing, Ru, Hongqiang, Wang, Wei, Jiang, Yan, Ren, Shiyuan, Ye, Chaochao, Zhang, Cuiping, and Wang, Shuhan
- Subjects
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CERAMICS , *BORON carbides , *SINTERING , *CONSTRUCTION materials , *SCANNING electron microscopes , *FLEXURAL strength - Abstract
Abstract SiC ceramics are important high-temperature structural materials with excellent chemical and physical properties. However, the different impurities are usually introduced into the raw materials in the preparation of SiC powders, especially Fe 2 O 3 impurity. The current work aims to investigate the effect of Fe 2 O 3 contents (0–0.8 wt%) on the sintering behaviour and mechanical properties of SiC ceramics. Fe 2 O 3 -containing SiC ceramics were prepared by pressureless sintering using carbon and boron carbide as sintering additives. The X-ray diffraction, inductively coupled plasma-atomic emission spectrometry, scanning electron microscope, and mechanical testing were used to understand the effect of Fe 2 O 3 on a few key properties of sintered samples. The results indicated that the hardness (from 24.4 ± 1.0 GPa to 27.2 ± 1.3 GPa) and flexural strength (from 360 ± 38 MPa to 394 ± 18 MPa) can be increased by 10% upon a gentle introduction of only 0.02 wt% of Fe 2 O 3 , due to the formation of fine gains and homogenous microstructures. However, the further increase of Fe 2 O 3 contents above 0.4 wt% is found to be detrimental to sintering of SiC ceramics. It is suggested that excessive Fe 2 O 3 reacts with C leading to the formation of more volatile species (CO, Fe), and increasing the porosity of SiC matrix, which hampers the densification process and is harmful to mechanical properties of sintered SiC. Highlights • Hardness and flexural strength can be increased by 10% upon a gentle introduction of only 0.02 wt% of Fe 2 O 3. • The abnormal growth of grains can be controlled to some extent by adding Fe 2 O 3. • The content of Fe 2 O 3 should be controlled within 0.4 wt% in the preparation of SiC powders. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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