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Start Over Author "Zhang, Fengyan" Journal japanese journal of applied physics
6 results on '"Zhang, Fengyan"'

6. Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi2Ta2O9Thin Film Deposition

Author

Zhang, Fengyan, Maa, Jer-shen, Hsu, Sheng Teng, Ohnishi, Shigeo, and Zhen, Wendong

Abstract

An Ir-Ta-O/Ta/Si structure with Ir-Ta-O as electrode and Ta as diffusion barrier layer on silicon substrate has been fabricated. The Ir-Ta-O film was deposited by reactive sputtering using separate Ir and Ta targets in oxygen ambient. Annealing results performed from 500-1000°C in oxygen ambient showed that the Ir-Ta-O film exhibited extraordinary high temperature stability. This film showed good conductivity and integrity even after 5 min annealing at 1000°C. No destructive peeling and hillock formation were observed. By using this film as bottom electrode for depositing ferroelectric SrBi2Ta2O9thin film at 800°C, good ferroelectric properties were achieved.

Published
1999
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