1. Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy
- Author
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Kheng-Chok Tee, Vanissa Sei-Wei Lim, David Vigar, Lap Chan, Wai Shing Lau, Yao-Yao Jiang, Chee-Wee Eng, and Alastair Trigg
- Subjects
Electron mobility ,Materials science ,Channel (digital image) ,business.industry ,Computation ,Transistor ,General Engineering ,Analytical chemistry ,General Physics and Astronomy ,Nanotechnology ,Scanning capacitance microscopy ,law.invention ,Oxide semiconductor ,CMOS ,law ,Optoelectronics ,Extraction methods ,business - Abstract
A modified shift-and-ratio (MS&R) method of extracting the effective channel length (L eff) has been tested on metal oxide semiconductor (MOS) transistors fabricated by state-of-the-art CMOS technology. The value of L eff generated by this method is more reasonable than the original shift-and-ratio method with much less computation time involved. We show the correctness of the MS&R method by comparing the L eff extracted with the channel length obtained by cross-sectional scanning capacitance microscopy (SCM) measurement. In addition, we show that a higher off current corresponds to a smaller L eff measured by our method.
- Published
- 2004
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