36 results on '"Yamamoto, Tetsuya"'
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2. Highly moisture resistant Ga-doped ZnO films with textured surface for thin-film solar cells with indium codoping fabricated by ion plating with direct-current arc discharge
3. Observation of Continuous and Quantized Domain Size and Shape Evolution in Monolayers at Air–Water Interface
4. Study of Domain Shapes and Orientational Structure of Phospholipid Monolayers using Maxwell Displacement Current and Brewster Angle Microscopy
5. Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy
6. Control of N-Impurity States in N-Doped ZnO, ZnS and ZnTe
7. Near-Field Distribution of Radial Line Slot Antenna for Surface-Wave-Coupled Plasma Generation
8. Control of Defects in CuInS2 Thin Films by Incorporation of Na and O
9. Theoretical Predictions for Codoping Properties in Wide Band-gap Semiconductors
10. Difference in Mechanism of Compensation by Cu Vacancies between n-Type Zn- and Cd-Doped CuInS2 Crystals
11. Effects of Na Incorporation on Electronic Structures of p-Type Cu-deflcient CuInS2 Crystals
12. Production of Large-Diameter Uniform Plasma in mTorr Range Using Microwave Discharge
13. Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation
14. Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO
15. Effects of Na Incorporation in p-Type CuInS2
16. Temperature Dependence of the Ideality Factor of Ba1-xKxBiO3/Nb-doped SrTiO3 All-Oxide-Type Schottky Junctions
17. Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe
18. Effect of the Field Dependent Permittivity and Interfacial Layer on Ba1-xKxBiO3/Nb-Doped SrTiO3 Schottky Junctions
19. Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping Method
20. P-Type Doping of the Group V Elements in CuInS2
21. Electronic Structures and Effects of S Substitutions in CuIn(S0.875X0.125)2 (X=O, N, P, C, SiorB)
22. Study of the Tunneling Characteristics of Ba1-xKxBiO3 Superconducting Thin Films Based on the Gap-Energy Distribution Model
23. Physics and Control of Conduction Type in CuInS2 with Defect Chalcopyrite Structure
24. Characterization of Ba1-xKxBiO3 Superconducting Thin Films for Three-Terminal Devices
25. Preparation and Characteristics of a Superconducting Base Transistor with an Au/Ba1-xKxBiO3/Niobium-Doped SrTiO3 Structure
26. Junction Characteristics of an Au/Ba1-xKxBiO3/Niobium-Doped SrTiO3 Structure
27. Quantum Mechanical Transmission and Reflection of Quasi-Particles at Arbitrary Potential Barriers in the Superconducting Base Transistor
28. Transverse Field in the Sherrington-Kirkpatrick Model
29. Control of Defects in CuInS2Thin Films by Incorporation of Na and O
30. Solution Using a Codoping Method to Unipolarityfor the Fabrication of p-Type ZnO
31. Temperature Dependence of the Ideality Factor of Ba1-xKxBiO3/Nb-doped SrTiO3All-Oxide-Type Schottky Junctions
32. Electronic Structures and Effects of S Substitutions in CuIn(S0.875X0.125)2(X=O, N, P, C, SiorB)
33. Characterization of Ba1-xKxBiO3Superconducting Thin Films for Three-Terminal Devices
34. Study of the Tunneling Characteristics of Ba1-xKxBiO3Superconducting Thin Films Based on the Gap-Energy Distribution Model
35. Physics and Control of Conduction Type in CuInS2with Defect Chalcopyrite Structure
36. Effect of the Field Dependent Permittivity and Interfacial Layer on Ba1-xKxBiO3/Nb-Doped SrTiO3Schottky Junctions
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