44 results on '"Wang, Shui"'
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2. Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer
3. The use of a multiple roughening scheme to enhance sensing performance of pH sensors with NiO nanosheets/multi-walled carbon nanotubes on KOH-etched Si substrates
4. Enhanced electrical performance and reliability of Ti-IGZO thin-film transistors with Hf1-xAlxO gate dielectrics
5. A dual surface roughening scheme to improve the sensitivity of pH sensors based on hydrothermally grown nickel oxide nanosheets on KOH-etched Si substrates
6. Performance enhancement of a hydrothermally grown ZnO-based ultraviolet photodetector using substrate transfer and pyramid-like surface texture
7. Super-Nernstian pH sensors based on WO3nanosheets
8. A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered ZrxSi1−xO2Gate dielectric and improved electrical and hysteresis performance
9. Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes
10. Improving source/drain contact resistance of amorphous indium–gallium–zinc-oxide thin-film transistors using an n+-ZnO buffer layer
11. Preparation of TiO2 nanowire arrays through hydrothermal growth method and their pH sensing characteristics
12. Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer
13. Preparation and Characteristic of Relative-Humidity Sensors Based on Laterally Grown ZnO Nanowires
14. Light Output Improvement of GaN-Based Light-Emitting Diodes Using Hydrothermally Grown ZnO Nanotapers
15. Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications
16. Characterization of Hf1-xZrxO2 Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications
17. Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film
18. High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
19. Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2Reflector and Roughened GaOxSurface Film
20. Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates
21. Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods
22. The Role of High-κ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
23. A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes
24. Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
25. Development of Gas Sensors Based on Tungsten Oxide Nanowires in Metal/SiO2/Metal Structure and Their Sensing Responses to NO2
26. A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate
27. Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates
28. High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures
29. Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
30. High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films
31. Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization
32. Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
33. Influences of Interface Roughness Scattering on Asymmetric and/or Steplike Current–Voltage Characteristics of Resonant Tunneling Diodes
34. Numerical Simulation and Experimental Realization of δ-doped Single Barrier Resonant Tunneling Diodes
35. Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method
36. High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
37. Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
38. Preparation of SiO2Nanotubes with Controllable Inner/Outer Diameter and Length Using Hydrothermally Grown ZnO Nanowires as Templates
39. The Role of High-$\kappa$ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
40. Characterization of Hf1-xZrxO2 Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications.
41. Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film
42. High-Performance Double ?-Doped Channel Si Metal Semiconductor Field-Effect Transistors
43. Boron Delta-Doped Si- and Ge0.2Si0.8-Channel Metal Semiconductor Field-Effect Transistors Grown by Molecular Beam Epitaxy
44. Numerical Simulation and Experimental Realization of ?-doped Single Barrier Resonant Tunneling Diodes
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