19 results on '"Threading (manufacturing)"'
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2. Fabrication of GaN crystals with low threading dislocation density and low resistivity by thin flux growth in the Na-flux point seed technique
3. Direct observation and three dimensional structural analysis for threading mixed dislocation inducing current leakage in 4H–SiC IGBT
4. Reaction pathway analysis for the conversion of perfect screw basal plane dislocation to threading edge dislocation in 4H-SiC
5. High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity
6. Corrigendum: 'Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC' [Jpn. J. Appl. Phys. 57, 065501 (2018)]
7. Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC
8. Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy
9. Inclination of a threading dislocation in an epilayer of 4H-SiC
10. Atomic Core Structures Associated to the Threading Dislocation with <11̄00> Burgers Vector and [0001] Line Direction in GaN
11. Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities
12. Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers
13. InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers
14. Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
15. Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
16. Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
17. Reduction of Threading Dislocation Density and Suppression of Crack Formation in InxGa 1-xP(x∼0.5) Grown on Si(100) Using Strained Short-Period Superlattices
18. Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-µm-Wavelength Laser on GaAs
19. Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy
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