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The intermediate blocking layer (IBL) was investigated for the development of highly efficient and bright organic light-emitting diodes (OLEDs). The insertion of an IBL between a hole transport layer and an emitting layer (EML) has resulted in the development of highly efficient and bright OLEDs. The quantum efficiency and electrical durability at high voltage were highly dependent on the thickness of the IBL. The maximum external quantum efficiency of the devices with a 1.5-nm-thick IBL was increased by 28% compared with the reference. The enhanced performance of the OLEDs appears to be due to the improvement of carrier balance and exciton confinement.

We investigated the effect of anode rotation on the nucleation and growth of B–C–N nanotubes by the plasma rotating electrode process (PREP). With rotation of the anode and/or increase in metal concentration, the number and length of nanotubes were increased, that is, the yield of B–C–N nanotubes was increased. This result is related to the improvement of discharge characteristics by rotating the anode and/or the enhanced catalytic effect of metal species.

An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.