1. Low-Power and High-Reliability Gadolinium Oxide Resistive Switching Memory with Remote Ammonia Plasma Treatment
- Author
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Jer-Chyi Wang, Yu-Ren Ye, Jung Hung Chang, Chih-I Wu, Jhih-Sian Syu, Po-Sheng Wang, and Pin-Ru Wu
- Subjects
inorganic chemicals ,Passivation ,Hydrogen ,Chemistry ,General Engineering ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Plasma ,Electron ,Nitrogen ,Resistive random-access memory ,Ammonia ,chemistry.chemical_compound ,Grain boundary - Abstract
The effects of remote NH3 plasma treatment on a Pt/Gd x O y /W resistive random access memory (RRAM) metal–insulator–metal (MIM) structure were investigated. We found that a decrease in the electron barrier height caused by nitrogen incorporation at the Pt–Gd x O y interface can help reduce the operational set and reset voltages. Nitrogen atoms from the NH3 plasma prevent oxygen atoms in the film from diffusing through Pt grain boundaries into the atmosphere, resulting in superior retention properties (>104 s). The stability of the endurance behavior of Gd x O y RRAMs was significantly improved owing to the passivation of defects in Gd x O y films by nitrogen and hydrogen atoms from the remote NH3 plasma, markedly reducing plasma damage.
- Published
- 2013
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