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High output power and narrow spectral linewidth operation of 1.3 µm gain-coupled distributed feedback (DFB) lasers with InAsP buried absorptive grating is reported. In this study, we have investigated the effect of the thickness of a separate-confinement-heterostructure (SCH) layer on the single-mode stability and the spectral-linewidth property of 1.3 µm gain-coupled DFB lasers. As a result, we clarified that decreasing the thickness of the SCH layer led to stable single-mode operation at high output power and the reduction of the product of the spectral linewidth and the output power. For the fabricated gain-coupled DFB laser, a record high output power of 230 mW and a minimum spectral linewidth of 100 kHz at an output power of 150 mW were realized.

A new structure of 1.3 µm strained-layer multi-quantum well (MQW) complex-coupled distributed feedback lasers having an InAsP absorptive grating is demonstrated. In this structure, the InAsP absorptive grating and the strained-layer MQW active layer can be fabricated by a metalorganic vapor phase epitaxy process involving only one step. Furthermore, the fabricated laser has a low threshold current (16.8 mA) and a high efficiency (0.45 mW/mA).