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Flash spectral imaging of full area (156 mm by 156 mm) silicon solar wafers and cells is realized in a setup integrating pseudo-monochromatic LEDs over the wavelength range of 370 to 1050 nm and a high-resolution monochrome camera. The captured information allows the computation of sample reflectance as a function of wavelength and coordinates, thereby constituting a spectral reflectance map. The derived values match that obtained from monochromator-based measurements. Optical inspection is then based on the characteristic reflectance of surface features at optimally contrasting wavelengths. The technique reveals otherwise hidden stains and anti-reflection coating (ARC) non-uniformities, and enable more selective visualization of grains in multicrystalline Si wafers. Optical contrast enhancement of metallization significantly improves accuracy of metal detection. The high effective resolution of the monochrome camera also allows fine metallization patterns to be measured. The rapid succession of flash-and-image-capture at each wavelength makes the reported optical metrology technique amenable in photovoltaic manufacturing for solar wafers/cells sorting, monitoring and optimization of processes.