1. Development of a CMOS-compatible contact technology for III–V materials and Si photonics
- Author
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Fabrice Nemouchi, Philippe Rodriguez, N. Coudurier, Christophe Jany, S. Zhiou, Salma bensalem, Bertrand Szelag, F. Boyer, E. Ghegin, Patrice Gergaud, and Laura Toselli
- Subjects
010302 applied physics ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,General Engineering ,General Physics and Astronomy ,Laser ,01 natural sciences ,Line (electrical engineering) ,law.invention ,Surface preparation ,law ,0103 physical sciences ,Optoelectronics ,Photonics ,business ,Ohmic contact ,Cmos compatible - Abstract
In this progress review, an overview of the CMOS-compatible contact technology developed at the CEA-Leti for Si photonics applications is proposed. The elaboration of III–V/Si hybrid lasers implies the development of ohmic contacts on n-InP and p-InGaAs III–V materials. In this way, a contact technology fully compatible with a Si-Fab line was developed. The results presented in this manuscript cover a wide scope: from surface preparation and solid-state reaction to electrical results and integration guidelines. The metallurgy of several systems including Ni/InGaAs, Ni/InP, Ti/InGaAs and Ti/InP was studied. The direct metallization of III–V materials using Ni2P was also introduced. Most of the studied metallizations provided efficient solutions for achieving ohmic contacts on n-InP and p-InGaAs. Finally, the contact technology developed in the framework of this study was successfully integrated on 200 mm CMOS-compatible III–V/Si hybrid lasers.
- Published
- 2020
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