115 results on '"Chang, Edward"'
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2. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation
3. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films
4. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement
5. Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films.
6. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films
7. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement.
8. On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films.
9. DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries
10. Reactive sputtering of ferroelectric AlScN films with H2gas flow for endurance improvement
11. Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
12. RF power FinFET transistors with a wide drain-extended fin
13. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
14. Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
15. High-frequency performances of superjunction laterally diffused metal–oxide–semiconductor transistors for RF power applications
16. Effective surface treatment for GaN metal–insulator–semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation
17. Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
18. Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application
19. InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
20. Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
21. Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
22. Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching
23. Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz
24. InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate
25. Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3Dry Etching
26. Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
27. Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
28. Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
29. Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
30. A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications
31. Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
32. DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
33. Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application
34. WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors
35. InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
36. AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers
37. Metamorphic In0.53Ga0.47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2High-kDielectrics
38. High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications
39. InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges
40. Mechanism of Microstructure Evolution for the Cu/Ta/GaAs Structure after Thermal Annealing
41. New Cu/Mo/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs for InGaP/GaAs Heterojunction Bipolar Transistors
42. Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application
43. A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
44. Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
45. Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
46. Growth of ZnSe Epilayer on Si Using Ge/GexSi1-x Buffer Structure
47. Controlled Placement of Self-Organized Ge Dots on Patterned Si (001) Surfaces
48. Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
49. Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations
50. Flower-Like Distributed Self-Organized Ge Dots on Patterned Si (001) Substrates
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