1. Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN
- Author
-
Brian B. Haidet, Biplab Sarkar, Zachary Bryan, Ramon Collazo, Isaac Bryan, Ronny Kirste, Zlatko Sitar, and Pramod Reddy
- Subjects
010302 applied physics ,Work (thermodynamics) ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Orders of magnitude (temperature) ,Schottky barrier ,General Engineering ,General Physics and Astronomy ,Vanadium ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Nonlinear system ,Improved performance ,chemistry ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Voltage ,Titanium - Abstract
In this work, we report on voltage dependent contact characteristics of Al-rich n-AlGaN due to the presence of a Schottky barrier at the metal–AlGaN interface. Current–voltage characteristics appear to be linear at low voltages, but a clear nonlinearity is evident at high voltages. Unlike Ga-rich n-AlGaN where V-based contact marginally outperforms the Ti-based contact, V-based contact to Al-rich n-AlGaN outperforms the Ti-based contact by ~2 orders of magnitude for all voltage ranges. The improved performance of V-based contacts is likely due to a lower Schottky barrier and partly due to ease of formation of a low barrier V–AlGaN interface.
- Published
- 2017