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Annealing is a heat treatment that alters the physical and sometimes chemical properties of a material to improve their crystalline structure and other important properties. This work presents the effect of post heat treatment on optical, structural, morphological, and surface roughness of Nb2O5 thin films at different temperatures (200-700oC) which to the best of our knowledge not been extensively studied yet. A clear modification in surface morphology and other studied properties was obtained. XRD results show a significant enhancement in the film's structural properties such as a reduction in the dislocation densities and stress. The optical properties of the treated films show a clear decrease in the transmission and energy gap values which their values were found to reduce from (4.35 to 2.9) eV with heat treatment up to 600oC and re-increase at 700oC. The surface roughness was also enhanced as a result of increasing the grain size from (9.95 - 34.7) nm Finally, SEM images of the films show an obvious change in their morphology and an increase in film uniformity as a result of heat treatment. Therefore, heat treatment could be considered as a helpful method to control film characteristics. Main result should be presented quantitatively. [ABSTRACT FROM AUTHOR]

Researchers previously focused on tungsten trioxide (WO3) modified with noble metals. Different methods were used for syntheses such as pulsed laser deposition, co-sputtering metallic, colloidal chemical method, one-pot method, sol-gel, and hydrothermal methods. The photo-catalytic performance and sensing properties of WO3 were extremely enhanced. This review aimed to examine the increasing significance of WO3 based on previous studies and possible future outlook. [ABSTRACT FROM AUTHOR]

This work presents the effect of NH4OH molarities on the electrical characteristics of Nb2O5 films prepared using the precipitation method. Hall Effect measurements proved the formation of n-type Nb2O5 films. The carrier concentration was found to increase with ammonium hydroxide molarities up to 12mol/L, while the carrier mobility decreased. Resistivity-temperature measurements confirm the semiconductor behaviors of the thin films. It also shows a decrease in the resistivity and activation energy with molarity increasing reaching its minimum value in 12 mol/L then they increased again. [ABSTRACT FROM AUTHOR]