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The temperature dependence of the threshold current in electron-beam-pumped (EBP) lasers using p-type GaAs (2 1.0 cm) at 27 kV is theoretically determined, taking into account the inhomogeneous distribution and the temperature dependence of the lifetime of the excess carriers. The computed dependence is found to be in excellent agreement with the experimental observation. A comparison is then made of the result with results obtained under different assumptions to confirm positively that, in the study of the performance of these lasers, the above two features cannot be ignored.
The purpose of the present communication is to determine the influence of the inhomogeneous distribution of the minority carriers on the temperature dependence of the threshold current in EBP lasers using p-type GaAs (2 10 cm) at 27 kV, taking due consideration of the variation of the recombination lifetime with temperature. [ABSTRACT FROM AUTHOR]