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In this paper, a novel low‐cost, double‐node upset (DNU) tolerant latch aiming at nourishing the lack of these devices in the state of the art was presented, especially featuring high reliability while maintaining a low‐cost profile. The proposed latch is based on a low‐cost single event double‐node upset tolerant latch and also provides self‐recoverability against double‐node‐upsets. The latch uses clock‐controlled DICE (Dual‐interlocked storage cell) cell and CE(C‐Elements) cell to tolerate double‐node‐upsets fully. The Simulation waveforms and analysis results show that the proposed latch can maintain the correct output in any case of DNU. In addition, under the premise of high radiation tolerance, the minimum improvement of the area‐power‐delay product (APDP) of the proposed low‐power double‐node‐upsets hardened latch (LPDHL) is 16.60%, compared with the latest DNU tolerant latch on the literature. [ABSTRACT FROM AUTHOR]

This paper comprehensively perfects the sensitive node transient detection feedback latch (SNTDFL) technique, subsequently conceptualizes an ideal hardening structure for the pre‐amplification stage, and proposes a radiation hardened by design (RHBD) strategy to cope with the severe single‐event transient (SET) effects of high‐precision voltage comparators in a space radiation environment. Analysis and verification results show that the hardening strategy exhibits excellent SET hardening performance, which can not only detect extremely small transient voltage disturbances at sensitive nodes but also effectively resist transient current pulses of various intensities generated by SETs. Compared with an unhardened high‐precision comparator, the proposed one, hardened with a hybrid strategy of SNTDFL and triple modular redundancy (TMR) techniques, can greatly preserve the original electrical properties and remarkably improve the tolerance of SET with little overhead. In addition, the proposed high‐precision comparator significantly reduces static power consumption compared with the one hardened with the TMR technique alone and has a smaller area overhead. [ABSTRACT FROM AUTHOR]

Summary: To reduce the impact of the single‐event transient (SET) effect on the high‐precision comparator, based on the common high‐gain pre‐amplification stage structure of the comparator, a new radiation hardened by design (RHBD) method, namely, the sensitive node transient detection feedback latch (SNTDFL) technique, is proposed. The hardening technique avoids comparator erroneous output by detecting the sensitive nodes of the high‐gain pre‐amplification stage. The detection circuit receives the response generated by the high energy particle impacts and feeds the high level back to the sensitive nodes to latch the current comparator state. In this paper, a novel high‐precision SET hardened voltage comparator based on this technique is developed. Through detailed circuit principle and simulation analysis, the functional characteristics and the hardening performance of the high‐precision hardened comparator are verified. Compared with the unhardened and the TMR technique hardened comparator, the SNTDFL technique hardened comparator effectively avoids the erroneous output caused by the SET effect with less overhead and still has excellent functional characteristics. [ABSTRACT FROM AUTHOR]

Summary: In this paper, a highly stable and low‐cost 12T (HSLC12T) radiation hardened static‐random‐access‐memories (SRAM) cell is proposed in 55 nm CMOS technology. Based on polarity reversal design and read/write separation structure, the proposed HSLC12T cell can recover from any single event upsets (SEUs) induced at all its sensitive nodes and even single event double‐node‐upsets (SEDNUs) induced at its internal storage node pair Q‐QN, while also having the maximum read static noise margin (RSNM) and lower static hold power, as well as excellent write speed and write‐ability. Though the HSLC12T cell exhibits a larger read delay, it has the best overall performance of all other cells. This is proven by having the highest electrical quality metric (EQM) value, thus making the proposed HSLC12T cell a better choice for aerospace applications. [ABSTRACT FROM AUTHOR]