Search

In this work, PZT (52/48) thin films were deposited at substrate temperature ranging from room temperature (RT) to 600°C and with various oxygen percentage in a mixed argon and oxygen gas at substrate temperature of 600°C on LNO/Si by an r.f. magnetron sputtering method. It was found that the crystallinities were enhanced with increasing substrate temperature. Hence, the ferroelectricities and electrical properties were also simultaneously improved. The crystallinities degraded with increasing O2 percentages, hence, the degraded ferroelectricities and relevant electrical properties.

In this work, PZT (52/48) and PZT (30/70) thin films were deposited at a substrate temperature of 600°C with Argon gas pressure ranging from 2.8 × 10−2 mbar to 4.3 × 10−3 mbar by r. f. magnetron sputtering on LNO/Si substrates. Highly (100)-oriented rhombohedral structured PZT (52/48) thin films were formed. We found that the out-of-plane lattice constant increased commensurately with a decrease in Ar pressure, while remnant polarization and dielectric constant increased with decreasing Ar pressure. On the other hand, the PZT (30/70) thin films sputter-deposited on LNO/Si(100) at substrate temperatures of 600°C with various Ar gas pressures formed a tetragonal structure. The fraction of c-domain, hence the remnant polarization, increased with decreasing Ar pressure, while the dielectric constant decreased with decreasing Ar pressure.

An innovative high oxygen-pressure processing (HOPP) was developed. By HOPP for 10 hours, the spin-eoated PZT 50/50 thin film was successfully crystallized and highly (100) oriented PZT thin film was obtained at temperature as low as 400°C. This noval HOPP is compatible to the ferroelectric PZT film integration with readout integrated chip. The PZT 50/50 thin film by HOPP showed a well-saturated hysteresis loop at an applied electric field of 367 kV/cm with P r and E c of 45 C/cm2 and 121 kV/cm, respectively. The large values of P r and E c result from large leakage.