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This article describes a new kind of afterglow material, ScBaZn3GaO7:Bi3+, which was synthesized through a high-temperature solid-phase method. Its crystal structure, photoluminescent characteristics, and afterglow characteristics were studied and analyzed. Upon excitation at 344 nm, ScBaZn3GaO7:Bi3+exhibits broadband emission with a central wavelength located at 571 nm (fwhm = 172.98 nm). The sample exhibits an internal quantum efficiency of 65.1%. The bright yellow persistent luminescence of the ScBaZn3GaO7:Bi3+sample was observed after 365 nm irradiation. Thermoluminescence spectroscopy revealed four primary traps within ScBaZn3GaO7:Bi3+, with depths of 0.676, 0.794, 0.882, and 0.972 eV. The traps located at energy levels of 0.676 and 0.794 eV were identified as the key contributors to the sample’s afterglow. Finally, the ScBaZn3GaO7:Bi3+sample was combined with a UV-LED chip to fabricate a high-power warm white-light-emitting diode (WLED) device, indicating the potential application prospect of ScBaZn3GaO7:Bi3+phosphor in single-phase warm WLEDs.

An organic–inorganic hybridized polyoxotungstate which contains two kinds of covalently linked tungstate clusters in its polyanion has been obtained. The three clusters are connected by glutamic acid molecules and europium atoms through Eu–O–C bonds. The cluster in the middle position is a tetramer. Two of the same clusters at two sides are dimers that are functionalized by glutamic acid molecules. The solid-state luminescence of this compound exhibited the characteristic emission of Eu3+centers with a lifetime of 232 μs.

The La2LiSbO6: xCr3+phosphors were synthesized by means of a high-temperature solid-phase method. Based on the differences in ionic radius, valence state, and formation energy, the substitution sites of Cr3+ions are discussed in detail. The optimized doping concentration of Cr3+is determined to be 0.01. Under 517 nm excitation, the La2LiSbO6: 0.01Cr3+phosphor presents a wide emission band (from 700 to 1350 nm) with a peak centered at 952 nm. Additionally, its corresponding full width at half-maximum is 155 nm, and the internal quantum efficiency reaches 62.4%. Meanwhile, the emission intensity of the La2LiSbO6: 0.01Cr3+phosphor at 373 K is about 63.7% of that at room temperature, exhibiting good thermal stability. Aiming to fabricate a near-infrared phosphor-converted light-emitting diode device, the La2LiSbO6: 0.01Cr3+phosphor is mixed with epoxy adhesive and cured on a green light-emitting diode chip. Under the irradiation of the fabricated light-emitting diode device, fruits and writing in the dark environment can be captured by a near-infrared camera. Hence, the La2LiSbO6: 0.01Cr3+phosphor is promising for night vision.