1. Carrier Tuning in ZnSnN2 by Forming Amorphous and Microcrystalline Phases
- Author
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Dongdong Zhang, Mingcai Yao, Xiaojie Wu, Fanzhi Meng, Kai Guan, Deliang Chu, and Jian Meng
- Subjects
Electron mobility ,010405 organic chemistry ,business.industry ,Chemistry ,Sputter deposition ,010402 general chemistry ,01 natural sciences ,0104 chemical sciences ,law.invention ,Amorphous solid ,Inorganic Chemistry ,Semiconductor ,Microcrystalline ,law ,Optoelectronics ,Physical and Theoretical Chemistry ,Thin film ,Crystallization ,business ,Stoichiometry - Abstract
ZnSnN2 (ZTN), an earth-abundant element semiconductor, is a potential candidate for photovoltaic applications. However, the excessively high n-type carrier concentration caused by intrinsic defects hinders its progress. In this work, a series of Zn1± xSnN2 thin films are fabricated by RF-magnetron sputtering deposition. The zinc-rich composition is found to promote the crystallization of ZTN. As a main source of n-type carriers in the zinc-rich thin films, the interstitial Zn dominates the change of carrier concentration with an increase in the Zn/Sn ratio. Near the stoichiometric ratio, amorphous ZTN (a-ZTN) thin films are fabricated, and the n-type carrier concentration is suppressed to 1016 cm-3. With an increase in the Zn/Sn ratio from 0.9 to 1.3, the n-type carrier concentration can be tuned in the range 1016-1019 cm-3, accompanied by the phase-transition from a-ZTN to microcrystalline ZTN (μc-ZTN). For the a-ZTN thin film, the carrier mobility reaches up to 7 cm2 V-1 s-1, and the photoresponse covers almost the whole visible band. The above properties demonstrate that a-ZTN and μc-ZTN are potential candidates for photovoltaic applications.
- Published
- 2019