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Silicon-nanocrystals (Si-NCs) realized by SiOx8 MV/cm; independent of temperature), while for lower electric fields (5-8 MV/cm) at higher temperatures, the trap-related Generalized Poole-Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO2 films. We then present the conduction in ML samples. For multilayer samples with SiO2 sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO2 sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO2 sublayer thickness dependence. (C) 2016 Elsevier B.V. All rights reserved.

Herein, we report the synthesis, separation and characterisation of the E- and Z-isomers of dipyrrolyldiphenylethene to study their emission behaviour in the aggregation state and solid state. The E-isomer showed pronounced aggregation induced emission (AIE) whereas the Z-isomer showed crystallization induced emission (CIE). The present study explains that the emission behaviour (AIE/CIE) is dependent on the inter/intra molecular interactions between the molecules. The study also confirms that restriction of intramolecular rotation (RIR) is the main cause of AIE/CIE in olefinic luminogens Tetraphenylethylene (TPE) type systems rather than E/Z isomerisation.