1. Physical properties of hydrogenated amorphous gallium arsenide
- Author
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Luigi Schiavulli, F. Gozzo, G. Della Mea, Giorgio Kaniadakis, Antonio Drigo, F. Demichelis, Nicola Pinto, Anna Filomena Carbone, Alessandro Paccagnella, and Roberto Vittorio Murri
- Subjects
Hydrogen ,Band gap ,GaAs ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Hydrogenation ,Substrate (electronics) ,Amorphous solid ,Gallium arsenide ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,chemistry ,Sputtering ,Thin film ,Stoichiometry - Abstract
The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f. reactive sputtering at different hydrogen and argon pressure and substrate temperature have been determined. From the dependence of the absorption coefficient on photon energy the optical gap has been deduced according to the Tauc law. The data obtained for stoichiometric samples are compared with similar data obtained by different authors. The influence of various deposition parameters on stoichiometry and on the optical properties is briefly discussed.
- Published
- 1991
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