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A low-power 3-9 GHz receiver front-end with excellent stop-band rejection by 0.18 µm CMOS technology is demonstrated. High stop-band rejection is achieved by using a pre-filter with three finite-transmission zeros, one of which (ωz1=0.9 GHz) is in the low-frequency stop-band and the other two (ωz2 and ωz4) are in the high-frequency stop-band. In the low-gain (LG) mode, the receiver front-end consumes 9.45 mW and achieves high and flat conversion gain (CG) of 25.7±1.5 dB, noise figure (NF) of 6.95 dB, and input third-order intercept point (IIP3) of -8 dBm. To the author's knowledge, this is the lowest-power dissipation (PD) ever reported for a 0.18 mm CMOS receiver front-end with NF smaller than 7 dB, average CG greater than 25 dB and bandwidth wider than or equal to 6 GHz. In the high-gain (HG) mode, the receiver front-end consumes 19.5 mW and achieves high and flat CG of 32.7±1.6 dB, NF of 6.78 dB and IIP3 of -13.5 dBm. In addition, in both the LG and HG modes, the receiver front-end achieves stop-band rejection better than 30 dB for frequencies DC∼1.5 GHz and larger than 12 GHz. [ABSTRACT FROM AUTHOR]

A DC∼10.5 GHz complimentary metal oxide semiconductor (CMOS) distributed amplifier (DA) with flat and low noise figure (NF), flat and high power gain (S21) and small group delay (GD) variation for ultra-wideband (UWB) pulse radio systems using standard 0.18 µm CMOS technology is demonstrated. Flat and low NF was achieved by adopting the proposed resistor capacitor (RC) terminal network with 140 Ω terminal resistance over the frequency band of interest (instead of the traditional 50 Ω terminal resistance or the recently proposed resistor inductor (RL) terminal network) for the gate transmission line. Besides, flat and high S21 was achieved by using cascoded transistors as the gain cell. Over the DC∼10.5 GHz band, the DA consumed 29.16 mW and achieved flat and high |S21| of 10.5±1.4 dB, flat and low NF of 3.2±0.3 dB and excellent phase linearity (the GD variation was only ±13.8 ps), one of the best NF and phase linearity results ever reported for a CMOS DA or wideband low-noise amplifier (LNA) with bandwidth greater than 7.5 GHz. [ABSTRACT FROM AUTHOR]