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We describe a large-scale integrated circuit (LSI) design of rapid single-flux-quantum (RSFQ) circuits and demonstrate several reconfigurable data-path (RDP) processor prototypes based on the ISTEC Advanced Process (ADP2). The ADP2 LSIs are made up of nine Nb layers and Nb/AlOx/Nb Josephson junctions with a critical current density of 10 kA/cm2, allowing higher operating frequencies and integration. To realize truly large-scale RSFQ circuits, careful design is necessary, with several compromises in the device structure, logic gates, and interconnects, balancing the competing demands of integration density, design flexibility, and fabrication yield. We summarize numerical and experimental results related to the development of a cell-based design in the ADP2, which features a unit cell size reduced to 30-μm square and up to four strip line tracks in the unit cell underneath the logic gates. The ADP LSIs can achieve ∼10 times the device density and double the operating frequency with the same power consumption per junction as conventional LSIs fabricated using the Nb four-layer process. We report the design and test results of RDP processor prototypes using the ADP2 cell library. The RDP processors are composed of many arrays of floating-point units (FPUs) and switch networks, and serve as accelerators in a high-performance computing system. The prototypes are composed of two-dimensional arrays of several arithmetic logic units instead of FPUs. The experimental results include a successful demonstration of full operation and reconfiguration in a 2×2 RDP prototype made up of 11.5k junctions at 45 GHz after precise timing design. Partial operation of a 4×4 RDP prototype made up of 28.5k-junctions is also demonstrated, indicating the scalability of our timing design. key words: advanced process, cell-based design technique, high-end computing, large-scale integration, rapid single-flux-quantum circuits

A single flux quantum (SFQ) logic cell library has been developed for the 10kA/cm 2 Nb multi-layer fabrication process to efficiently design large-scale SFQ digital circuits. In the new cell library, the critical current density of Josephson junctions is increased from 2.5 kA/cm 2 to 10 kA/cm 2 compared to our conventional cell library, and the McCumber-Stwart parameter of each Josephson junction is increased to 2 in order to increase the circuit operation speed. More than 300 cells have been designed, including fundamental logic cells and wiring cells for passive interconnects. We have measured all cells and confirmed they stably operate with wide operating margins. On-chip high-speed test of the toggle flip-flop (TFF) cell has been performed by measuring the input and output voltages. The TFF cell at the input frequency of up to 400 GHz was confirmed to operate correctly. Also, several fundamental digital circuits, a 4-bit concurrent-flow shift register and a bit-serial adder have been designed using the new cell library, and the correct operations of the circuits have been demonstrated at high clock frequencies of more than 100 GHz.

We developed an Nb-based fabrication process for single flux quantum (SFQ) circuits in a Japanese government project that began in September 2002 and ended in March 2007. Our conventional process, called the Standard Process (SDP), was improved by overhauling all the process steps and routine process checks for all wafers. Wafer yield with the improved SDP dramatically increased from 50% to over 90%. We also developed a new fabrication process for SFQ circuits, called the Advanced Process (ADP). The specifications for ADP are nine planarized Nb layers, a minimum Josephson junction (JJ) size of 1×1μm, a line width of 0.8μm, a JJ critical current density of 10kA/cm2, a 2.4Ω Mo sheet resistance, and vertically stacked superconductive contact holes. We fabricated an eight-bit SFQ shift register, a one million SQUID array and a 16-kbit RAM by using the ADP. The shift register was operated up to 120GHz and no short or open circuits were detected in the one million SQUID array. We confirmed correct memory operations by the 16-kbit RAM and a 5.7 times greater integration level compared to that possible with the SDP.