1. Tunable capacitors employing BZN/BST thin films for RF applications
- Author
-
Yanrong Li, Ruguan Li, Libin Gao, Luyu Wang, and Shuwen Jiang
- Subjects
Materials science ,Acoustics and Ultrasonics ,business.industry ,Electrical engineering ,law.invention ,Capacitor ,Intermediate frequency ,law ,Q factor ,Optoelectronics ,Insertion loss ,Dielectric loss ,Electrical and Electronic Engineering ,Thin film ,business ,Instrumentation ,Phase shift module ,Diode - Abstract
Tunable parallel-plate capacitors employing Bi(1.5)Zn(1.0)Nb(1.5)O(7)/Ba(0.5)Sr(0.5)TiO(3) (BZN/BST) thin films for RF applications are reported. The intermediate frequency measurements indicate that the BZN/BST-based varactors demonstrate large tunability of 39% at 40 V and high device quality factor of 300 at 1 MHz. The devices maintain quite low leakage current density even under a high applied bias. The quality factor analysis shows that the device quality factor is highly dependent on conductor loss of electrodes at frequencies above 1 MHz. The phase shifter employing BZN/BST-based varactors exhibits lower insertion loss than does employing semiconductor diodes at a designed frequency of 445 MHz, demonstrating the potential of tunable capacitors employing BZN/BST thin films for RF applications.
- Published
- 2011