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This paper presents a board-level integrated silicon carbide (SiC) mosfet power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200 °C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC mosfet phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225 °C. [ABSTRACT FROM AUTHOR]

This paper presents a hybrid modular multilevel converter (MMC), which combines full-bridge submodules (FBSM) and half-bridge submodules (HBSM). Compared with the FBSM-based MMC, the proposed topology has the same dc fault blocking capability but uses fewer power devices hence has lower power losses. To increase power transmission capability of the proposed hybrid MMC, negative voltage states of the FBSMs are adopted to extend the output voltage range. The optimal ratio of FBSMs and HBSMs, and the number of FBSMs generating a negative voltage state are calculated to ensure successful dc fault blocking and capacitor voltage balancing. Equivalent circuits of each arm consisting of two individual voltage sources are proposed and two-stage selecting and sorting algorithms for ensuring capacitor voltage balancing are developed. Comparative studies for different circuit configurations show excellent performance balance for the proposed hybrid MMC, when considering dc fault blocking capability, power losses, and device utilization. Experimental results during normal operation and dc fault conditions demonstrate feasibility and validity the proposed hybrid MMC. [ABSTRACT FROM AUTHOR]

This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit. [ABSTRACT FROM AUTHOR]

Insulated gate bipolar transistor (IGBT) modules are important safety critical components in electrical power systems. Bond wire lift-off, a plastic deformation between wire bond and adjacent layers of a device caused by repeated power/thermal cycles, is the most common failure mechanism in IGBT modules. For the early detection and characterization of such failures, it is important to constantly detect or monitor the health state of IGBT modules, and the state of bond wires in particular. This paper introduces eddy current pulsed thermography (ECPT), a nondestructive evaluation technique, for the state detection and characterization of bond wire lift-off in IGBT modules. After the introduction of the experimental ECPT system, numerical simulation work is reported. The presented simulations are based on the 3-D electromagnetic-thermal coupling finite-element method and analyze transient temperature distribution within the bond wires. This paper illustrates the thermal patterns of bond wires using inductive heating with different wire statuses (lifted-off or well bonded) under two excitation conditions: nonuniform and uniform magnetic field excitations. Experimental results show that uniform excitation of healthy bonding wires, using a Helmholtz coil, provides the same eddy currents on each, while different eddy currents are seen on faulty wires. Both experimental and numerical results show that ECPT can be used for the detection and characterization of bond wires in power semiconductors through the analysis of the transient heating patterns of the wires. The main impact of this paper is that it is the first time electromagnetic induction thermography, so-called ECPT, has been employed on power/electronic devices. Because of its capability of contactless inspection of multiple wires in a single pass, and as such it opens a wide field of investigation in power/electronic devices for failure detection, performance characterization, and health monitoring. [ABSTRACT FROM AUTHOR]

This paper proposes a novel packaging method for insulated-gate bipolar transistor (IGBT) modules based on the concepts of P-cell and N-cell. The novel packaging reduces the stray inductance in the current commutation path in a phase-leg module and hence improves the switching behavior. A P-cell- and N-cell-based module and a conventional module are designed. Using finite-element-analysis-based Ansys Q3D Extractor, electromagnetic simulations are conducted to extract the stray inductance from the two modules. Two prototype phase-leg modules based on the two different designs are fabricated. The parasitics are measured using a precision impedance analyzer. Finally, a double pulse tester based-switching characterization is performed to illustrate the effect of stray inductance reduction in the proposed packaging design. The experimental results show the reduction in overshoot voltage with the proposed layout. [ABSTRACT FROM AUTHOR]

Direct liquid microchannel cooling is of great interest when considering the thermal management of high-heat flux power devices and modules. This paper presents an original concept for efficient cooling of power devices based on the integration of a microchannel cooler, including numerous parallel through wafer fluid vias, directly into the drift region of the vertical power device and perpendicular to the PN junction of the device. Simulation results proved that no negative side effects are resulting from this integration regarding the electrical performance of the device. Electrical tests were carried out to validate the functionality of the fabricated prototypes. The effectiveness of the proposed cooling technique was evaluated with hydraulic and thermal numerical models. In line with the design of the device and the microchannel cooler analysis, an experimental setup for the measurement of the thermal and hydraulic performances of the concept was realized. Pressure drops were measured and compared with the theoretical results. [ABSTRACT FROM AUTHOR]

The layout of power modules is one of the key points in power module design, especially for high power densities, where couplings are increased. In this paper, along with the design example, automatic design processes by using a genetic algorithm are presented. Some practical considerations and implementations are introduced in the optimization of module layout design. [ABSTRACT FROM AUTHOR]

This paper describes the development and implementation of an analytical 3-D thermal model for fast and accurate thermal simulation of power device modules in electrothermal converter simulation. A Fourier-based solution is used to solve the 3-D heat equation. The solution can describe the variation of temperature through the whole inverter power module structure as a function of time. The model can simulate thermal interactions resulting from multiple heat sources. The thermal model is extremely fast to simulate compared to finite-element (FEM) approaches. The new model has been implemented in MATLAB/Simulink in order to cosimulate with the converter model which is in the same form. The model has been validated against the computational fluid dynamics (CFD) software package FLOTHERM and shows good agreement. The required aspects of 3-D heat diffusion are captured successfully by the Fourier-based model. [ABSTRACT FROM AUTHOR]