1. Characterization of a 3.3-kV Si-SiC Hybrid Power Module in Half-Bridge Topology for Traction Inverter Application.
- Author
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Li, Daohui, Li, Xiang, Chang, Guiqin, Qi, Fang, Packwood, Matthew, Pottage, Daniel, Wang, Yangang, Luo, Haihui, Dai, Xiaoping, and Liu, Guoyou
- Subjects
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HYBRID power , *SCHOTTKY barrier diodes , *INSULATED gate bipolar transistors , *SILICON carbide , *CURRENT distribution - Abstract
A state-of-the-art 3.3-kV/450-A hybrid power module for the next generation traction inverter of rolling stock is reported in this paper, combining the silicon (Si) insulated-gate bipolar transistor (IGBT) and silicon carbide Schottky barrier diodes (SBDs) chips. Compared with the existing hybrid technology at the same voltage level, this module is characterized by a half-bridge topology, in which 6 IGBT and 12 SBD chips are integrated in each switch. The outnumbering of the diodes represents a promising mitigation to the low availability of SBDs at this voltage level. Both static and dynamic test of this module and an equivalent Si-based module are carried out comparatively. Apart from describing the features of compactness, low-inductance, and good current distribution among chips, this module is characterized by low turn-on current overshooting and turn-on loss of IGBTs, negligible diode reverse recovery time and loss, as well as flexible allowance of IGBT turn-on current rising rate $\boldsymbol{dI}/\boldsymbol{dt}$. A parameterized study is carried out to benchmark the advantage of this new topology. Based on the experimental results, the performance of the hybrid module in a three-phase traction inverter circuit is also evaluated by means of electro-thermal simulation. The hybrid module distinguishes itself by describing much lower power loss and junction temperature than its Si-based counterpart. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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