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Due to the unbalanced three-phase currents and the torque ripples and speed fluctuations to the drive caused by the current sampling errors of three-phase current sensors and corresponding signal processing circuits, the estimation on current sampling errors is of great importance to eliminate these adverse effects. The observer-based methods, however, present two defects: first, they could increase the computational burden to the drives, thus limiting their practical applications; second, their high dependence on the system speed or position feedback information might degrade the estimation accuracy. To solve these problems, this article proposed a fixed-point sampling method of lower branch flows and three phase-currents, which adopts the relations between the measured currents, rather than any complex algorithm, to estimate the current sampling errors. To coordinate with the proposed strategy, a fixed-point sampling scheme was accordingly rolled out. Compared with the observer-based methods, as a fixed-point one, much applicable to actual digital controllers, it could reduce the computational burden of the drive. Meanwhile, its effectiveness was verified by experimental results on a 1.5-kW IPMSM prototype, which showed accurate estimated current sampling errors and the effectively eliminated torque ripples and speed fluctuations. [ABSTRACT FROM AUTHOR]

This letter proposes a structured approach for accurate estimation of diode reverse-recovery characteristics using datasheet specifications. Considering a conductance model of a diode, the entire reverse-recovery process is divided into four operating modes. The state equations for each mode are derived taking the circuit nonidealities, viz., device capacitance and parasitic inductances, into account. Analytical expressions for reverse-recovery charge, reverse-recovery time, and diode current are derived and numerically solved to estimate the diode conductance directly from manufacturer's data. An empirical model is proposed to characterize the effects of temperature variation on the diode conductance. Numerical simulation and experimental results are presented for antiparallel diodes of three MOSFETs having different current and voltage ratings and also for a discrete p-n diode at different junction temperatures. The maximum estimation error with the proposed approach is 5.1% for peak reverse-recovery current and less than 8% for reverse-recovery time, peak voltage, and energy loss. [ABSTRACT FROM AUTHOR]