18 results on '"Zhang Zhengxuan"'
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2. Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs
3. A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models
4. An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs
5. Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs With Gaussian Doping Profile
6. Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs
7. Enhanced Radiation Hardness in SOI MOSFET with Embedded Tunnel Diode Layer
8. Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node
9. Anomalous Electrical Properties Induced by Hot-Electron-Injection in 130-nm Partially Depleted SOI NMOSFETs Fabricated on Modified Wafer
10. Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs
11. Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step ${\hbox {Si}}^ + $ Implantation
12. A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs
13. Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs
14. Radiation Hardening by Applying Substrate Bias
15. Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology
16. Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation
17. Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET
18. Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step \ Si^ + Implantation.
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