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This paper presents a single event burnout (SEB) sensitivity characterization for power MOSFETs, independent from tests, through a prediction model issued from TCAD analysis and the knowledge of device topology. The methodology is applied to a STRIPFET device and compared to proton data obtained at PSI, showing a good agreement in the order of magnitude of proton SEB cross section, and thus validating the prediction model as an alternative device characterization with respect to SEB.

A system to monitor the radiation levels is required in the Large Hadron Collider (LHC) and its injection lines in order to quantify the radiation effects on electronics. Thus, the RadMons were installed in critical areas where equipment is or will be placed. The first years of operation, successive test campaigns and new requirements, raised the need for a new design of the monitor. The architecture of the new RadMon, the radiation reliability and the design strategy adopted for the sensors, used for monitoring the mixed radiation field of the LHC accelerator, are described highlighting the achieved improvements in terms of radiation robustness and measurement accuracy of a device which is of interest for many other research institutes.

We use a single event latchup (SEL) model calibrated to heavy ion (HI) and proton data below 230 MeV to extrapolate the proton cross section to larger energies and evaluate the impact of the potential cross section increase with energy on the SEL rate in different environments. We show that in the case of devices with a large LET onset for HI and a certain amount of tungsten near the sensitive volume (SV), the calculated failure rates for energetic environments based on monoenergetic test data can significantly underestimate the real value. In addition, we show through measurements using a 480 MeV beam and an inspection of the device's architecture that the model was successful in estimating the SEL cross section and tungsten volume per cell.

It is essential to characterize power MosFETs regarding their tolerance to destructive Single Event Burnouts (SEB). Therefore, several non-destructive test methods have been developed to evaluate the SEB cross-section of power devices. Power MosFETs have been evaluated using a test circuit, designed according to standard non-destructive test methods discussed in the literature. However, destructive events were observed and affected the evaluation of the cross-section. This paper analyzes results obtained using different test circuit configurations based on standard non-destructive test methodologies and evaluates their respective effectiveness. In addition, protection methods are discussed and simulations are performed to better understand the underlying effects.

More than 400 radiation monitoring devices are nowadays installed in the CERN LHC tunnel and its adjacent shielded areas to measure radiation effects on the electronics and anticipate possible device degradation. Supported by the experience accumulated in the last years' operation, a major system upgrade has been prepared. In this paper, the operational architecture of the new detector will be discussed focusing mainly on the advantages provided to the accelerator radiation monitoring impacting electronics installed in its vicinity. The new data acquisition software infrastructure will be detailed referring to the implemented approach to make the management and the maintenance of the entire system easier.

At the Large Hadron Collider (LHC), installed electronics will be exposed to a radiation field of mixed particles over a wide range of energies. While Monte Carlo transport codes can be used for calculations and predictions of radiation levels, the complex operation and layout of the LHC accelerator give rise to unavoidable uncertainties. Dedicated radiation monitors are therefore installed in locations of the electronics to provide an online measurement of the radiation levels pertinent to single-event upsets (SEUs). This paper addresses the method that has been applied to calibrate these radiation monitors for their use in mixed radiation fields. New irradiation tests to determine the sensitivity to neutrons from a few megaelectronvolts to 20 MeV will be presented along with additional irradiation tests with high-energy protons .