1. Growth of thick films CdTe from the vapor phase
- Author
-
Greiffenberg, D., Sorgenfrei, R., Bachem, K.H., and Fiederle, M.
- Subjects
Crystallography -- Analysis ,Thick films -- Analysis ,Business ,Electronics ,Electronics and electrical industries - Abstract
100 [micro]m thick films of CdTe were grown on semi-insulating (100) GaAs substrates by Physical Vapor Transport (PVT) in a modified Molecular Beam Epitaxy facility. The grown layers were highly oriented as revealed from X-ray pole figure measurements. Temperature- and intensity-dependent photoluminescence measurements were taken before and after the chemical removal of the substrate to determine the effect of the GaAs substrate and to estimate the crystallographic quality of the layers. Current-voltage characteristics were performed to obtain the resistitivity of the layers with [10.sup.8] [OMEGA]cm. Index Terms--CdTe, MBE, photoluminescence, radiation detector, thick films, x-ray diffraction.
- Published
- 2007