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The threshold current of multi-quantum well laser diodes increased by about 1.5 mA at a proton fluence of 6x[10.sup.2] p/[cm.sup.2]. It recovered gradually due to forward-bias annealing at [I.sub.bias]= 35 mA and became about 0.8mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1.87x[10.sup.9] p/[cm.sup.2]/s(4.7% at a fluence of 6x[10.sup.12] p/[cm.sup.2]) is less than that at a proton flux of 1.45x[10.sup.10] p/[cm.sup.2]/s (10.5% at a fluence of 6x[10.sup.12] p/[cm.sup.2]) due to the in-situ forward-bias annealing effects.

200 MeV proton damage effects on multi-quantum well GaAs/GaAlAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60x[10.sup.-15] [cm.sup.2]/p for different bias conditions and from 1.52 to 3.58x[10.sup.-15] [cm.sup.2]/p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at [I.sub.bias] = 35mA.

Presents a study concerning the damaging effects which 200 Me V proton have caused on the multi-quantum well laser diodes. Variation of the threshold current damage factor; Presentation of preliminary annealing effects; Important role which the multi-quantum well laser diodes play.