1. Novel complementary resistive switch crossbar memory write and read schemes
- Author
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Yuanfan Yang, Dhiraj K. Pradhan, Salvatore Pontarelli, Jimson Mathew, and Marco Ottavi
- Subjects
Scheme (programming language) ,Computer science ,Memristor ,Parallel computing ,Settore ING-INF/01 - Elettronica ,Computer Science Applications ,law.invention ,Non-volatile memory ,law ,Low-power electronics ,Key (cryptography) ,Electronic engineering ,Overhead (computing) ,State (computer science) ,Electrical and Electronic Engineering ,Crossbar switch ,computer ,computer.programming_language - Abstract
Recent trends in emerging nonvolatile memory systems necessitate efficient read/write (R/W) schemes. Efficient solutions with zero sneak path current, nondestructive R/W operations, minimum area and low power are some of the key requirements. Toward this end, we propose a novel crossbar memory scheme using a configuration row of cells for assisting R/W operations. The proposed write scheme minimizes the overall power consumption compared to the previously proposed write schemes and reduces the state drift problem. We also propose two read schemes, namely, assisted-restoring and self-resetting read. In assisted-restoring scheme, we use the configuration cells which are used in the write scheme, whereas we implement additional circuitry for self-reset which addresses the problem of destructive read. Moreover, by formulating an analytical model of R/W operation, we compare the various schemes. The overhead for the proposed assisted-restoring write/read scheme is an extra redundant row for the given crossbar array. For a typical array size of $200\times 200$ the area overhead is about $0.5\%$ , however, there is a 4X improvement in power consumption compared to the recently proposed write schemes. Quantitative analysis of the proposed scheme is analyzed by using simulation and analytical models.
- Published
- 2015