1. Microwave modulators based on 4H-SiC p-i-n diodes
- Author
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Zekentes, Konstantinos, Camara, Nicolas, Basanets, Volodymyr V., Boltovets, Mykola S., Kryvutsa, Valentyn A., Orechovskij, Volodymyr O., Simonchuk, Vasyl I., Zorenko, Alexander V., and Bano, Edwige
- Subjects
Diodes -- Usage ,Circuit design -- Methods ,Circuit designer ,Integrated circuit design ,Business ,Computers ,Electronics ,Electronics and electrical industries - Abstract
Multidiode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized for the first time. The diodes used for the modulator fabrication exhibited a blocking voltage of 1100 V, a 100-mA differential resistance of 1-3 [ohm], a punch-through voltage (100 V) capacitance below 0.5 pF, and a carrier effective lifetime of 15 ns. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7-GHz frequency range, while their switching speed is as low as 30 ns. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB in the 2-7-GHz frequency range at temperatures up to 300[degrees] C. Index Terms--Insertion loss, isolation, microwave modulators, p-i-n diode, silicon carbide, switches.
- Published
- 2008