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This paper presents the design and development of highly linear, wide bandwidth mixers. We propose a linearization technique that combines the optimum drain bias condition and multiple-gated transistors for resistive mixers. An on-chip three-line edge-coupled Marchand balun is designed to have low phase and amplitude imbalance for canceling out the even order intermodulation products. Two mixer prototypes: a single-balanced (SB) mixer and a double-balanced (DB) mixer are designed to prove the concepts. The experimental results demonstrate that the SB prototype mixer has a measured conversion loss of less than 11 dB and third-order input intercept point (IIP3) range of 27–33 dBm at 15-dBm LO drive from 7 to 34 GHz. The DB mixer exhibits a conversion loss of less than 11 dB and IIP3 range of 31–35 dBm from 7–26 GHz at 17-dBm LO drive. Both prototypes achieve a high port-to-port isolation of over 30 dB within the operation bandwidth. To the best of our knowledge, the mixers have the highest linearity over the widest bandwidth ever reported. [ABSTRACT FROM PUBLISHER]

Describes an improved large-signal model for predicting the intermodulation distortion power characteristic of MESFET in switching applications. Model of the voltage-dependent drain current and its derivatives such as gate-source and gate-drain capacitors; Symmetric equivalent circuit for switching MESFET.

Focuses on the automatic method for self-calibrating six-port reflectometers. Measurement of the microwaveguides; Use of the impedance synthesis systems; Application of the reflection coefficients.

Reports on extensive measurements of a drain breakdown current as a function of device bias. Proposal of two modeling function and an equivalent circuit controlled by two voltages; Improvement of accuracy of simulation; Nonlinear model; Metal-semiconductor field-effect transistors (MESFET).