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This work presents an acoustic platform using solidly mounted thin-oriented lithium niobate (LiNbO3) film on silicon (Si). A thin layer of amorphous Si eliminates a conductive layer generated in the thin-film bonding processes and contributes to acoustic energy confinement and thermal frequency stability. The gigahertz operating frequency is achieved by resorting to the guided acoustic wave shear-horizontal wave (SH0) in a 400-nm-thick X-cut LiNbO3 thin film. Due to the elimination of the parasitic surface conduction (PSC) effect, the electromechanical coupling of the guide acoustic wave is maximized in the Si-based heterogeneous wafer. Due to the minimized acoustic impedance mismatch between surface material and substrate, longitudinal and higher order spurious modes are suppressed. Due to the stiff substrate with a small temperature expansion coefficient (TEC), the solidly mounted structure features a reduced temperature coefficient of frequency (TCF) and improved power handling. The fabricated resonator shows an extracted electromechanical coupling coefficient of 22.8%, a high loaded $Q$ of 1208 at 1.6 GHz, and a TCF of −36 p/min/K. The compressed filter is demonstrated with a minimum insertion loss (IL) of 0.6 dB, a fractional bandwidth (FBW) of 8%, an out-of-band rejection of 30 dB, a TCF of −38.5 p/min/K at roll-off, and a miniaturized footprint of 0.4 mm2. The performance has shown the strong potential of the LiNbO3–Si platform for front-end applications in 5G. [ABSTRACT FROM AUTHOR]

In this article, near-zero drift and high electromechanical coupling acoustic resonators have been designed and demonstrated. The acoustic resonator is based on Lamb acoustic waves in a bimorph composed of lithium niobate on silicon dioxide. Our approach breaks through a performance boundary in conventional Lamb-wave resonators by introducing the bimorph while operating at higher order resonant modes. This enables the resonator to achieve frequency scalability, a low-temperature coefficient of frequency, and high electromechanical coupling altogether. The electromechanical coupling and temperature coefficient of the resonator were analytically optimized for the A3 mode through adjusting the thicknesses of different materials in the bimorph. Resonators with different dimensions and stack thickness were fabricated and measured, resulting in a temperature coefficient of frequency ranging from −17.6 to −1.1 ppm/°C, high electromechanical coupling ranging from 13.4% to 18%, and quality factors up to 800 at 3.5 GHz. The achieved specifications are adequate for fifth-generation (5G) sub-6-GHz frequency bands n77 and n78. [ABSTRACT FROM AUTHOR]

In this work, we present the first group of gigahertz low-loss, wideband, and high power handling delay lines (ADLs) using a thin-film lithium niobate (LiNbO3)-on-sapphire platform. The ADLs leverage a single-phase unidirectional transducer (SPUDT) to efficiently excite the shear horizontal surface acoustic wave (SH-SAW) in the film stack. The fabricated miniature SH-SAW ADL at 1.1 GHz shows a low insertion loss (IL) of 2.8 dB, a wide fractional bandwidth (FBW) of 6.14%, and a fast phase velocity of 5127 m/s. The device also features a high 1-dB compression point (P1dB) of 30.4 dBm. The temperature coefficient of frequency is −45 ppm/K. ADLs with delays between 12 and 172 ns have been implemented, with IL between 2.8 and 8.3 dB. SH-SAW propagation characteristics are extracted, showing a group velocity of 4747 m/s and a propagation loss of 6.73 dB/mm or 31.9 dB/ $\mu \text{s}$. The simultaneous low-loss and high power handling illustrate the great potential of LiNbO3-on-sapphire for RF and cross domain applications at gigahertz. [ABSTRACT FROM AUTHOR]

This work presents a class of micro-electro-mechanical system (MEMS)-driven radio frequency filters in the X-band. The X-band center frequencies are achieved by resorting to the third-order antisymmetric Lamb wave mode (A3) in a 650-nm-thick Z-cut lithium niobate thin film. A novel bandwidth (BW) widening technique based on using the self-inductance of the top interdigital transducers and bus lines is proposed to overcome the limitations set by the electromechanical coupling (${k} _{t}^{2}$) and satisfy the demands in miniaturization and wide BW. Four different designs of the filters are designed and fabricated to show the trade-off among BW, insertions loss (IL), out-of-band rejections, and footprint. Due to the spurious-free and high- ${Q}$ performance of the A3 lithium niobate resonators, the fabricated A3 lithium niobate filters have demonstrated small in-band ripples and sharp roll-offs. One of these fabricated has demonstrated a 3-dB BW of 190 MHz, an IL of 1.5 dB, and a compact footprint of 0.56 mm2. Another design is fabricated to demonstrate a 3-dB BW of 170 MHz, an IL of 2.5 dB, an out-of-band rejection of 28 dB, and a compact footprint of 1 mm2. [ABSTRACT FROM AUTHOR]

In this article, we explore how acoustic wave filters starting with shunt resonator require particular reflection phase conditions to ensure that the synthesized filter is feasible. The position of transmission zeros (TZs) along with the phase of the objective filter function might lead to nonfeasible solutions where the first and last resonators require elements with positive reactance slope in the static branch, or equivalently, a nonphysical negative static capacitor. Since the reflection phase of a duplexer-oriented filter is fixed to reduce loading effects, the feasibility problem is solved by bringing the resonance frequency of the first resonator beyond the central frequency of the counter band. However, this entails surpassing the limits of the electromechanical coupling coefficient. We demonstrate how two reactive elements at the input overcome this resonance position limitation and provide a simple rule to decide the right topology. The position of the first TZ of duplexers will play an important role. Moreover, we provide rules on the reflection phase values that ensure that all resonators have a capacitive static branch. [ABSTRACT FROM AUTHOR]

In this work, we present the low-loss acoustic delay lines (ADLs) at 5 GHz, using the first-order antisymmetric (A1) mode in 128° Y-cut lithium niobate thin films. The ADLs use a single-phase unidirectional transducer (SPUDT) design with a feature size of quarter acoustic wavelength. The design space is analytically explored and experimentally validated. The fabricated miniature A1 ADLs with a feature size of $0.45~\mu \text{m}$ show a high operating frequency at 5.4 GHz, a minimum insertion loss (IL) of 3 dB, a fractional bandwidth (FBW) of 1.6%, and a small footprint of 0.0074 mm2. The low IL and high operating frequency have significantly surpassed the state-of-the-art performance of ADLs. The propagation characteristics of A1 acoustic waves have also been extracted. The demonstrated designs can lead to low-loss and high-frequency transversal filters for future 5G applications in the sub-6-GHz bands. [ABSTRACT FROM AUTHOR]

This work presents a new class of microelectromechanical system (MEMS) resonator toward 60 GHz for the fifth-generation (5G) wireless communications. The wide range of the operating frequencies is achieved by resorting to different orders of the antisymmetric Lamb wave modes in a 400-nm-thick Z-cut lithium niobate thin film. The resonance of 55 GHz demonstrated in this work marks the highest operating frequency for piezoelectric electromechanical devices. The fabricated device shows an extracted mechanical $Q$ of 340 and an $f\times Q$ product of $1.87\times 10^{13}$ in a footprint of $2 \times 10^{-3}$ mm2. The performance has shown the strong potential of LiNbO3 antisymmetric mode devices for front-end applications in 5G high-band. [ABSTRACT FROM AUTHOR]

We present the first group of acoustic delay lines (ADLs) at 5 GHz using the first-order antisymmetric (A1) mode in Z-cut lithium niobate thin films. The demonstrated ADLs significantly surpass the operation frequencies of the prior art with similar feature sizes because of their simultaneously fast phase velocity, large coupling coefficient, and low loss. In this article, the propagation characteristics of the A1 mode in lithium niobate are analytically modeled and validated with finite element analysis. The design space of A1 ADLs is then investigated, including both the fundamental design parameters and those introduced from the practical implementation. The implemented ADLs at 5 GHz show a minimum insertion loss of 7.9 dB, an average insertion loss (IL) of 9.1 dB, and a fractional bandwidth around 4%, with group delays ranging between 15 and 109 ns and the center frequencies between 4.5 and 5.25 GHz. The propagation characteristics of A1 mode acoustic waves have also been extracted for the first time. The A1 ADL platform can potentially enable wideband high-frequency passive signal processing functions for future 5G applications in the sub-6-GHz spectrum bands. [ABSTRACT FROM AUTHOR]

This paper demonstrates low-loss acoustic delay lines (ADLs) based on shear-horizontal waves in thin-film LiNbO3 for the first time. Due to its high electromechanical coupling, the shear-horizontal mode is suited for producing devices with large bandwidths. Here, we show that shear-horizontal waves in LiNbO3 thin films are also excellent for implementing low-loss ADLs based on unidirectional transducers. The high acoustic reflections and large transducer unidirectionality induced by the mechanical loading of the electrodes on a LiNbO3 thin film provide a great tradeoff between delay line insertion loss and bandwidth. The directionality for two different types of unidirectional transducers has been characterized. Delay lines with variations in the key design parameters have been designed, fabricated, and measured. One of our fabricated devices has shown a group delay of 75 ns with an IL below 2 dB over a 3-dB bandwidth of 16 MHz centered at 160 MHz (fractional bandwidth = 10%). The measured insertion loss for other devices with longer delays and different numbers of transducer cells are analyzed, and the loss contributing factors and their possible mitigation are discussed. [ABSTRACT FROM AUTHOR]

This paper demonstrates the first nonreciprocal network based on switched low-loss acoustic delay lines. The four-port circulator is built upon a recently reported frequency-independent, programmable, nonreciprocal framework based on switched delay lines. The design space for such a system, including the origins of the insertion loss (IL) and harmonic responses, is theoretically investigated, illustrating that the key to better performance and low-cost modulation signal synthesis lies in a large delay. To implement a large delay, we resort to in-house fabricated low-loss, wideband lithium niobate (LiNbO3)SH0 mode acoustic delay lines employing single-phase unidirectional transducers. The four-port circulator, consisting of two switch modules and one delay line module, has been modularly designed, assembled, and tested. The design process employs time-domain full circuit simulation, and the results match well with measurements. An 18.8-dB nonreciprocal contrast between IL (6.6 dB) and isolation (25.4 dB) has been achieved over a fractional bandwidth of 8.8% at a center frequency 155 MHz, using a record low switching frequency of 877.19 kHz. The circulator also shows 25.9-dB suppression for the intramodulated tone and 30 dBm for IIP3. Upon further development, such a system can potentially lead to future wideband, low-loss chip-scale nonreciprocal radio frequency systems with unprecedented programmability. [ABSTRACT FROM AUTHOR]

This paper presents the first demonstration of nanowatt-level CMOS wakeup receiver (WuRx) front ends (FEs) that utilize microelectromechanical system (MEMS)-based matching networks (MNs). The first FE uses a fully MEMS-based MN (MMN) that operates at 88.8 MHz. It consists of a large array of lithium niobate resonators that are fabricated on the same die. Measurements of the integrated WuRx FE with the MMN indicate that its loaded voltage gain achieves a bandwidth of 0.78 MHz with a quality factor of 114. The second FE uses a hybrid MN (HMN) that operates at 457 MHz. It consists of an aluminum nitride laterally vibrating resonator as well as eight discrete inductors and capacitors surrounding the MEMS device. Measurements of the integrated WuRx FE with the HMN indicate that it achieves a sensitivity of −54 dBm with 7 nW of average dc power consumption without a digital correlator. [ABSTRACT FROM AUTHOR]

This paper presents a comprehensive guide to co-design piezoelectric RF-micro-electromechanical system (MEMS) resonators and CMOS for enabling voltage-controlled MEMS oscillators (VCMOs) that harness the best benefits out of both platforms. The analysis, focusing on understanding different tradeoffs among the tuning range, power consumption, gain, and phase noise, is generic to any kind of piezoelectric resonators and specific for Colpitts VCMOs. As a result of this paper, the first VCMO based on the heterogeneous integration of a high-Q lithium niobate (LiNbO3) micromechanical resonator and CMOS has been demonstrated. A LiNbO3 resonator array with a series resonance at 171.1 MHz, a Q of 410, and an electromechanically coupling factor of 12.7% is adopted, while the TSMC 65-nm RF LP CMOS technology is used to implement the feedback and tuning circuitry with an active area of $220\times 70\,\,\mu \text{m}^{2}$. The frequency tuning of the VCMO is achieved by programming a binary weighted digital capacitor bank and a varactor that are both connected in series to the resonator. The best measured phase noise performance of the VCMO is −72 and −153 dBc/Hz at 1 kHz and 10-MHz offsets from 178.23- and 175.83-MHz carriers, respectively. The VCMO consumes a dc current of $60~\mu \text{A}$ from a 1.2-V supply while realizing a tuning range of 2.4 MHz (~1.4% fractional tuning range). Such VCMOs can be applied to enable ultralow power, low phase noise, and wideband RF signal synthesis for emerging applications in Internet of Things. [ABSTRACT FROM AUTHOR]

This paper reports on a new type of microresonators enabled by micromachining of ion sliced X-cut \LiNbO3 thin films. In operation, the device is excited into lateral vibrations, thus allowing the center frequency to be determined by the lithographically defined dimensions of the excitation electrodes. The demonstrated device has a high electromechanical coupling (kt^{2}) of 11.5%—the highest attained for laterally vibrating microelectromechanical systems resonators. Device orientation was also varied to investigate its impact on kt^{2} and experimental data have shown good agreement with theoretical predictions. Several key performance parameters, including the quality factor (Q), the static capacitance, C0, the temperature coefficient of frequency (TCF), and the power handling, are also characterized and the related experimental data are presented. The devices demonstrate Q's up to 1800. The measured TCFs range from -55 to -69 ppm/K and can be considered sufficiently low for wideband RF filtering. The high electromechanical coupling and the high Q of this new class of devices show promise for the implementation of multifrequency wideband multiplexers and filter banks for reconfigurable RF front-ends. [ABSTRACT FROM PUBLISHER]

This paper presents a V-band 2-bit switched-line phase shifter using dc-contact single-pole four-throw (SP4T) RF microelectromechanical systems (RF-MEMS) switches for 60-GHz applications. The design and measurements of the SP4T RF-MEMS switches and the phase shifter are presented. The phase shifter demonstrates an average insertion loss of 2.5 dB in the 55–65-GHz band with a return loss better than 12 dB for each state. The phase error for each state of the switched-line phase shifter is less than 1° at 60 GHz. [ABSTRACT FROM AUTHOR]