1. Annealing Effect on the Structural and Magnetic Properties of Mn-Implanted 6H-SiC
- Author
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Alain Declémy, Khalid Bouziane, Maya Al Azri, Lionel Thomé, M. E. Elzain, Michel Viret, Salim M. Chérif, CSNSM PCI, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Service de physique de l'état condensé (SPEC - UMR3680), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
- Subjects
[PHYS]Physics [physics] ,010302 applied physics ,silicon carbide (SiC) ,Electron probe microanalysis ,Materials science ,Annealing (metallurgy) ,Analytical chemistry ,diluted magnetic semiconductors (DMSs) ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Fluence ,Spectral line ,Electronic, Optical and Magnetic Materials ,Dilution ,Magnetization ,0103 physical sciences ,Annealing effect ,implantation ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,Electrical and Electronic Engineering ,0210 nano-technology ,Spectroscopy - Abstract
International audience; n-type 6H-SiC(0001) substrates were implanted with a fluence of Mn+ 5x 10(16) (maximum Mn content of 7%), with implantation energy of 80 keV and substrate temperature of 365 degrees C to promote recrystallization. The samples were characterized using Rutherford backscattering and channeling (RBS/C) spectroscopy and electron probe microanalysis in the energy dispersive X-ray (EPMA-EDX) technique; while the magnetization was studied using a superconducting quantum interference device techniques. In the as-implanted sample, three well-defined specific defect zones were identified as deduced from the analysis of RBS/C spectra. It is shown that the two main vacancy-related and interstitial-related defects undergo limited changes when annealing at 800 degrees C, while a major recovery is obtained after annealing at 1100 degrees C. Strain relaxation was also observed upon annealing as determined from HRXRD. Magnetization was strongly reduced with increasing annealing temperature from 800 degrees C to 1600 degrees C. This effect seems to be related to the dilution effect (reduction of Mn content) due to the local diffusion of Mn as suggested from the results obtained using both RBS/C and EPMA-EDX techniques.
- Published
- 2014
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